公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract translation: 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US20150004743A1

公开(公告)日：2015-01-01

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US11367805B2

公开(公告)日：2022-06-21

申请号：US16316897

申请日：2017-07-12

Applicant: First Solar, Inc.

Inventor： Andrei Los ,  Roger Malik

IPC: H01L31/101 ,  H01L31/112 ,  H01L31/02 ,  H01L31/0232

Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20250015218A1

公开(公告)日：2025-01-09

申请号：US18710094

申请日：2022-11-16

Applicant: First Solar, Inc.

Inventor： James Becker ,  Vinodh Chandrasekaran ,  Casimir Kotarba ,  Andrei Los ,  Jialiu Ma

IPC: H01L31/0725 ,  H01L31/0224 ,  H01L31/0236

Abstract: Ways of making and using tandem photovoltaic devices are provided, where such devices can include a first submodule, a second submodule, and an interface between the first submodule and the second submodule. The interface permits a portion of light to pass therethrough and optically couples the first submodule and the second submodule. Optically coupling the first submodule and the second submodule includes reducing reflection of the portion of light passing through the interface.

公开(公告)号：US11450778B2

公开(公告)日：2022-09-20

申请号：US16305455

申请日：2017-05-31

Applicant: First Solar, Inc.

Inventor： Kenneth Ring ,  William H. Huber ,  Hongying Peng ,  Markus Gloeckler ,  Gopal Mor ,  Feng Liao ,  Zhibo Zhao ,  Andrei Los

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.