公开(公告)号：US20240138164A1

公开(公告)日：2024-04-25

申请号：US18277157

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

CPC classification number: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

公开(公告)号：US20240138163A1

公开(公告)日：2024-04-25

申请号：US18277153

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Mengjin Yang ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/86 ,  H10K30/40

CPC classification number: H10K30/86 ,  H10K30/40 ,  H10K85/50

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

公开(公告)号：US20230082682A1

公开(公告)日：2023-03-16

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/58 ,  C23C14/50 ,  C23C14/22 ,  H01G9/20 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US20240237370A9

公开(公告)日：2024-07-11

申请号：US18277153

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Mengjin Yang ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/86 ,  H10K30/40

CPC classification number: H10K30/86 ,  H10K30/40 ,  H10K85/50

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

公开(公告)号：US20250029792A1

公开(公告)日：2025-01-23

申请号：US18906018

申请日：2024-10-03

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US12112897B2

公开(公告)日：2024-10-08

申请号：US17801093

申请日：2021-02-19

Applicant: First Solar, Inc.

Inventor： Le Chen ,  David Ho ,  Xiaoping Li ,  Rick Powell ,  Tze-Bin Song ,  Vera Steinmann ,  Aravamuthan Varadarajan ,  Dirk Weiss ,  Gang Xiong ,  Zhibo Zhao

IPC: H01G9/00 ,  C23C14/06 ,  C23C14/22 ,  C23C14/50 ,  C23C14/58 ,  H01G9/20 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/16 ,  H10K85/30

CPC classification number: H01G9/0036 ,  C23C14/0694 ,  C23C14/228 ,  C23C14/50 ,  C23C14/5806 ,  H01G9/2009 ,  H10K30/30 ,  H10K30/40 ,  H10K30/82 ,  H10K71/164 ,  H10K85/30

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

公开(公告)号：US20240237371A9

公开(公告)日：2024-07-11

申请号：US18277157

申请日：2022-02-11

Applicant: First Solar, Inc. ,  Alliance for Sustainable Energy, LLC

Inventor： Joseph Jonathan Berry ,  Le Chen ,  Axel Finn Palmstrom ,  Tze-Bin Song ,  Vera Steinmann ,  Natasha Teran ,  Aravamuthan Varadarajan ,  Xueping Yi ,  Zhibo Zhao ,  Kai Zhu

IPC: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

CPC classification number: H10K30/89 ,  H10K30/10 ,  H10K30/50 ,  H10K71/60

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

公开(公告)号：US20240015992A1

公开(公告)日：2024-01-11

申请号：US18039820

申请日：2021-12-01

Applicant: First Solar, Inc.

Inventor： Duyen Cao ,  Markus Gloeckler ,  Sachit Grover ,  James Hack ,  Chungho Lee ,  Dingyuan Lu ,  Aravamuthan Varadarajan ,  Gang Xiong ,  Zhibo Zhao

IPC: H10K30/10 ,  H10K71/12

CPC classification number: H10K30/10 ,  H10K71/12

Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.