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公开(公告)号:US20240413254A1
公开(公告)日:2024-12-12
申请号:US18703192
申请日:2022-10-26
Applicant: First Solar, Inc.
Inventor: James Becker , William Huber , Chungho Lee , Jialiu Ma , Dirk Weiss , Gang Xiong
IPC: H01L31/0216 , H01L31/055
Abstract: Photovoltaic devices having bifacial enhancement are described herein.
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公开(公告)号:US20230082682A1
公开(公告)日:2023-03-16
申请号:US17801093
申请日:2021-02-19
Applicant: First Solar, Inc.
Inventor: Le Chen , David Ho , Xiaoping Li , Rick Powell , Tze-Bin Song , Vera Steinmann , Aravamuthan Varadarajan , Dirk Weiss , Gang Xiong , Zhibo Zhao
IPC: H01G9/00 , C23C14/06 , C23C14/58 , C23C14/50 , C23C14/22 , H01G9/20 , H01L51/00 , H01L51/42 , H01L51/44
Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
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公开(公告)号:US20250029792A1
公开(公告)日:2025-01-23
申请号:US18906018
申请日:2024-10-03
Applicant: First Solar, Inc.
Inventor: Le Chen , David Ho , Xiaoping Li , Rick Powell , Tze-Bin Song , Vera Steinmann , Aravamuthan Varadarajan , Dirk Weiss , Gang Xiong , Zhibo Zhao
IPC: H01G9/00 , C23C14/06 , C23C14/22 , C23C14/50 , C23C14/58 , H01G9/20 , H10K30/30 , H10K30/40 , H10K30/82 , H10K71/16 , H10K85/30
Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
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公开(公告)号:US12112897B2
公开(公告)日:2024-10-08
申请号:US17801093
申请日:2021-02-19
Applicant: First Solar, Inc.
Inventor: Le Chen , David Ho , Xiaoping Li , Rick Powell , Tze-Bin Song , Vera Steinmann , Aravamuthan Varadarajan , Dirk Weiss , Gang Xiong , Zhibo Zhao
IPC: H01G9/00 , C23C14/06 , C23C14/22 , C23C14/50 , C23C14/58 , H01G9/20 , H10K30/30 , H10K30/40 , H10K30/82 , H10K71/16 , H10K85/30
CPC classification number: H01G9/0036 , C23C14/0694 , C23C14/228 , C23C14/50 , C23C14/5806 , H01G9/2009 , H10K30/30 , H10K30/40 , H10K30/82 , H10K71/164 , H10K85/30
Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
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公开(公告)号:US20240429329A1
公开(公告)日:2024-12-26
申请号:US18825810
申请日:2024-09-05
Applicant: First Solar, Inc.
Inventor: Le Chen , Jing Guo , Dirk Weiss
IPC: H01L31/0224 , H01L31/0296
Abstract: Photovoltaic devices, and layer structures for photovoltaic devices, are described.
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