公开(公告)号：US09054241B2

公开(公告)日：2015-06-09

申请号：US14015041

申请日：2013-08-30

Applicant: First Solar, Inc.

Inventor： Bastiaan Arie Korevaar ,  Juan Carlos Rojo ,  Roman Shuba

IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/073 ,  H01L31/0296 ,  H01L33/00

CPC classification number: H01L31/022441 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/073 ,  H01L33/0083 ,  Y02E10/543

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract translation: 提供一种用于形成包括至少一个半导体层的光伏电池的背接触的方法。 该方法包括在半导体层的表面上施加化学活性材料的连续膜并激活化学活性材料，使得活化的材料蚀刻半导体层的表面。 该方法还包括从光伏电池移除活化材料的连续膜并在半导体层的蚀刻表面上沉积金属接触层。

公开(公告)号：US20150187981A1

公开(公告)日：2015-07-02

申请号：US14640595

申请日：2015-03-06

Applicant: First Solar, Inc.

Inventor： Bastiaan Arie Korevaar ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  C23C14/0021 ,  C23C14/024 ,  C23C14/0629

Abstract: Embodiments of the present invention include a method. The method includes producing a first vapor from a solid source material, reacting hydrogen telluride to form a second vapor comprising tellurium, and depositing on a support a coating material comprising tellurium within a deposition environment, the deposition environment comprising the first vapor and the second vapor. Another embodiment is a system. The system includes a deposition chamber disposed to contain a deposition environment in fluid communication with a support; a solid source material disposed in fluid communication with the deposition chamber; and a hydrogen telluride source in fluid communication in fluid communication with the deposition chamber.

Abstract translation: 本发明的实施例包括一种方法。 该方法包括从固体源材料制备第一蒸气，使碲化碲反应形成包含碲的第二蒸气，以及在沉积环境中在载体上沉积包含碲的涂层材料，沉积环境包括第一蒸气和第二蒸气 。 另一个实施例是系统。 该系统包括沉积室，其设置成容纳与载体流体连通的沉积环境; 设置成与沉积室流体连通的固体源材料; 和与沉积室流体连通的流体连通的碲化氢源。

公开(公告)号：US20160181463A1

公开(公告)日：2016-06-23

申请号：US15057230

申请日：2016-03-01

Applicant: First Solar, Inc.

Inventor： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract translation: 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。