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公开(公告)号:US11876140B2
公开(公告)日:2024-01-16
申请号:US13875739
申请日:2013-05-02
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi
IPC: H01L31/0272 , H01L31/073 , H01L31/0296 , H01L31/0224 , H01L21/02 , H01L31/0392 , H01L31/072 , H01L31/18 , C23C14/06
CPC classification number: H01L31/0272 , C23C14/0629 , H01L21/0248 , H01L21/0251 , H01L21/0256 , H01L21/02422 , H01L21/02477 , H01L21/02483 , H01L21/02491 , H01L21/02505 , H01L21/02562 , H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/022466 , H01L31/03925 , H01L31/072 , H01L31/073 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/50
Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
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公开(公告)号:US11784278B2
公开(公告)日:2023-10-10
申请号:US17963061
申请日:2022-10-10
Applicant: First Solar, Inc.
Inventor: Kristian William Andreini , Holly Ann Blaydes , Jongwoo Choi , Adam Fraser Halverson , Eugene Thomas Hinners , William Hullinger Huber , Yong Liang , Joseph John Shiang
IPC: H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/065 , H01L31/073
CPC classification number: H01L31/1828 , H01L31/02966 , H01L31/022425 , H01L31/065 , H01L31/073 , H01L31/1832 , Y02E10/543 , Y02P70/50
Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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公开(公告)号:US20140360565A1
公开(公告)日:2014-12-11
申请号:US13912782
申请日:2013-06-07
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi , Adam Fraser Halverson
IPC: H01L31/0272 , H01L31/18
CPC classification number: H01L31/1828 , H01L31/022425 , H01L31/02966 , H01L31/065 , H01L31/073 , H01L31/1832 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括硒,并且硒的原子浓度在吸收层的厚度上非线性地变化。 还提出了制造光伏器件的方法。
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公开(公告)号:US20240154049A1
公开(公告)日:2024-05-09
申请号:US18411782
申请日:2024-01-12
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi
IPC: H01L31/0272 , C23C14/06 , H01L21/02 , H01L31/0224 , H01L31/0296 , H01L31/0392 , H01L31/072 , H01L31/073 , H01L31/18
CPC classification number: H01L31/0272 , C23C14/0629 , H01L21/02422 , H01L21/02477 , H01L21/0248 , H01L21/02483 , H01L21/02491 , H01L21/02505 , H01L21/0251 , H01L21/0256 , H01L21/02562 , H01L31/022466 , H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/072 , H01L31/073 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/50
Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
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公开(公告)号:US20230045333A1
公开(公告)日:2023-02-09
申请号:US17963061
申请日:2022-10-10
Applicant: First Solar, Inc.
Inventor: Kristian William Andreini , Holly Ann Blaydes , Jongwoo Choi , Adam Fraser Halverson , Eugene Thomas Hinners , William Hullinger Huber , Yong Liang , Joseph John Shiang
IPC: H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/065 , H01L31/073
Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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公开(公告)号:US10141473B1
公开(公告)日:2018-11-27
申请号:US16032531
申请日:2018-07-11
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi , Adam Fraser Halverson
IPC: H01L31/0272 , H01L31/18 , H01L31/073 , H01L31/065 , H01L31/0224 , H01L31/0296
Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.
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公开(公告)号:US10062800B2
公开(公告)日:2018-08-28
申请号:US13912782
申请日:2013-06-07
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi , Adam Fraser Halverson
IPC: H01L31/0272 , H01L31/18 , H01L31/0224 , H01L31/0296 , H01L31/065 , H01L31/073
CPC classification number: H01L31/1828 , H01L31/022425 , H01L31/02966 , H01L31/065 , H01L31/073 , H01L31/1832 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.
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公开(公告)号:US20170236956A1
公开(公告)日:2017-08-17
申请号:US15586505
申请日:2017-05-04
Applicant: First Solar, Inc.
Inventor: Yong Liang , Jinbo Cao , William Hullinger Huber
IPC: H01L31/032 , H01L31/073 , H01L31/0224
CPC classification number: H01L31/0321 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/073 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented
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公开(公告)号:US20140326315A1
公开(公告)日:2014-11-06
申请号:US13875739
申请日:2013-05-02
Applicant: First Solar, Inc.
Inventor: Holly Ann Blaydes , Kristian William Andreini , William Hullinger Huber , Eugene Thomas Hinners , Joseph John Shiang , Yong Liang , Jongwoo Choi
IPC: H01L31/0272 , H01L31/0296
CPC classification number: H01L31/0272 , C23C14/0629 , H01L21/02422 , H01L21/02477 , H01L21/0248 , H01L21/02483 , H01L21/02491 , H01L21/02505 , H01L21/0251 , H01L21/0256 , H01L21/02562 , H01L31/022466 , H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/072 , H01L31/073 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.
Abstract translation: 介绍了光伏器件。 光伏器件包括层叠; 并且在层叠上设置吸收层。 吸收层包括硒,其中硒的原子浓度在吸收层的厚度上变化。 光电器件基本上不含硫化镉层。
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公开(公告)号:US11417785B2
公开(公告)日:2022-08-16
申请号:US15586505
申请日:2017-05-04
Applicant: First Solar, Inc.
Inventor: Yong Liang , Jinbo Cao , William Hullinger Huber
IPC: H01L31/032 , H01L31/0224 , H01L31/073
Abstract: A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.
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