公开(公告)号：US09349658B1

公开(公告)日：2016-05-24

申请号：US14608625

申请日：2015-01-29

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Bruce Doris ,  Kangguo Cheng ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L29/66 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/845 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: One illustrative embodiment involves forming a plurality of trenches in a substrate so as to define a fin, forming a first oxidation-blocking layer of insulating material in the trenches so as to cover a portion, but not all, of the sidewalls of the lower portion of the fin, forming a second layer of insulating material above the first oxidation-blocking layer of insulating material, and performing a thermal anneal process to convert part, but not all, of the lower portion of the fin positioned above the first oxidation-blocking layer of insulating material into an oxide fin isolation region positioned under the fin.

Abstract translation: 一个说明性实施例涉及在衬底中形成多个沟槽以限定翅片，在沟槽中形成绝缘材料的第一氧化阻挡层，以便覆盖下部分的侧壁的一部分但不是全部 在绝缘材料的第一氧化阻挡层之上形成第二绝缘材料层，并进行热退火处理以将位于第一氧化阻挡层之上的翅片的下部的部分转化而不是全部 绝缘材料层形成位于翅片下方的氧化物鳍片隔离区域。

公开(公告)号：US09117875B2

公开(公告)日：2015-08-25

申请号：US14155499

申请日：2014-01-15

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Murat Kerem Akarvardar ,  Jody A. Fronheiser ,  Kangguo Cheng ,  Bruce Doris ,  Kern Rim

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/306 ,  H01L21/324

CPC classification number: H01L21/76224 ,  H01L21/02532 ,  H01L21/3083 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: Forming a plurality of initial trenches that extend through a layer of silicon-germanium and into a substrate to define an initial fin structure comprised of a portion of the layer of germanium-containing material and a first portion of the substrate, forming sidewall spacers adjacent the initial fin structure, performing an etching process to extend the initial depth of the initial trenches, thereby forming a plurality of final trenches having a final depth that is greater than the initial depth and defining a second portion of the substrate positioned under the first portion of the substrate, forming a layer of insulating material over-filling the final trenches and performing a thermal anneal process to convert at least a portion of the first or second portions of the substrate into a silicon dioxide isolation material that extends laterally under an entire width of the portion of the germanium-containing material.

Abstract translation: 形成多个初始沟槽，其延伸穿过硅 - 锗层并进入衬底以限定由锗含量材料层的一部分和衬底的第一部分组成的初始鳍结构，形成邻近 初始鳍结构，执行蚀刻处理以延长初始沟槽的初始深度，由此形成多个最终深度大于初始深度的最终沟槽，并且限定位于第一部分第一部分下方的衬底的第二部分 所述衬底形成覆盖所述最终沟槽的绝缘材料层，并执行热退火工艺，以将所述衬底的所述第一或第二部分的至少一部分转化成二氧化硅隔离材料，所述二氧化硅隔离材料横向延伸在整个宽度 含锗材料的一部分。

公开(公告)号：US20150200128A1

公开(公告)日：2015-07-16

申请号：US14155499

申请日：2014-01-15

Applicant: International Business Machines Corporation ,  Globalfoundries Inc.

Inventor： Ajey Poovannummoottil Jacob ,  Murat Kerem Akarvardar ,  Jody A. Fronheiser ,  Kangguo Cheng ,  Bruce Doris ,  Kern Rim

IPC: H01L21/762 ,  H01L21/324 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02 ,  H01L21/8234

CPC classification number: H01L21/76224 ,  H01L21/02532 ,  H01L21/3083 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

Abstract: Forming a plurality of initial trenches that extend through a layer of silicon-germanium and into a substrate to define an initial fin structure comprised of a portion of the layer of germanium-containing material and a first portion of the substrate, forming sidewall spacers adjacent the initial fin structure, performing an etching process to extend the initial depth of the initial trenches, thereby forming a plurality of final trenches having a final depth that is greater than the initial depth and defining a second portion of the substrate positioned under the first portion of the substrate, forming a layer of insulating material over-filling the final trenches and performing a thermal anneal process to convert at least a portion of the first or second portions of the substrate into a silicon dioxide isolation material that extends laterally under an entire width of the portion of the germanium-containing material.

Abstract translation: 形成多个初始沟槽，其延伸穿过硅 - 锗层并进入衬底以限定由锗含量材料层的一部分和衬底的第一部分组成的初始鳍结构，形成邻近 初始鳍结构，执行蚀刻处理以延长初始沟槽的初始深度，由此形成多个最终深度大于初始深度的最终沟槽，并且限定位于第一部分第一部分下方的衬底的第二部分 所述衬底形成覆盖所述最终沟槽的绝缘材料层，并执行热退火工艺，以将所述衬底的所述第一或第二部分的至少一部分转化成二氧化硅隔离材料，所述二氧化硅隔离材料横向延伸在整个宽度 含锗材料的一部分。

公开(公告)号：US09673083B2

公开(公告)日：2017-06-06

申请号：US14608729

申请日：2015-01-29

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Bruce Doris ,  Kangguo Cheng ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/66 ,  H01L21/265 ,  H01L21/3115 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/76213 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/3083 ,  H01L21/31155 ,  H01L21/76224 ,  H01L29/66795

Abstract: One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, the fin having a lower first section that contains an oxidation-retarding implant region and an upper second section that is substantially free of the oxidation-retarding implant region, forming a sidewall spacer on opposite sides of the upper portion of the fin, forming a first layer of insulating material adjacent the sidewall spacers and the upper second section of the lower portion of the fin, and, with the first layer of insulating material in position, performing a thermal anneal process to convert the portion of the upper second section of the fin that is in contact with the first layer of insulating material into an oxide fin isolation region positioned under the fin above the lower first section of the fin.

公开(公告)号：US20160225677A1

公开(公告)日：2016-08-04

申请号：US15075437

申请日：2016-03-21

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Bruce Doris ,  Kangguo Cheng ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L21/84 ,  H01L21/3105 ,  H01L29/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/845 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes forming a plurality of trenches to define a fin, forming a first layer of insulating material in the trenches, forming a sidewall spacer on opposite sides of the fin above an upper surface of the first layer, removing the first layer and performing a fin-trimming etching process to define a plurality of increased-size trenches. The method also includes forming a first oxidation-blocking layer of insulating material in the increased-size trenches, forming a second layer of insulating material above the oxidation-blocking layer, and performing a thermal anneal process to convert at least a part of the portion of the fin that is in contact with the second layer of insulating material into an oxide fin isolation region

Abstract translation: 一种方法包括形成多个沟槽以限定翅片，在沟槽中形成绝缘材料的第一层，在第一层的上表面上方的翅片的相对侧上形成侧壁隔离物，去除第一层并执行 翅片修剪蚀刻工艺以限定多个增大尺寸的沟槽。 该方法还包括在增大尺寸的沟槽中形成绝缘材料的第一氧化阻挡层，在氧化阻挡层上方形成第二层绝缘材料，并进行热退火工艺以将部分的至少一部分 与第二绝缘材料层接触的鳍片形成氧化物鳍片隔离区域

公开(公告)号：US09639652B2

公开(公告)日：2017-05-02

申请号：US14148234

申请日：2014-01-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Paul Chang ,  Jie Deng ,  Terrence B. Hook ,  Sim Y. Loo ,  Anda C. Mocuta ,  Jae-Eun Park ,  Kern Rim ,  Xiaojun Yu

IPC: G06F17/50 ,  G01R31/28 ,  G01R31/30

CPC classification number: G06F17/5081 ,  G01R31/2848 ,  G01R31/3008 ,  G06F17/5009 ,  G06F17/5022 ,  G06F17/5036

Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

公开(公告)号：US09577100B2

公开(公告)日：2017-02-21

申请号：US14305543

申请日：2014-06-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Michael P. Chudzik ,  Eric C. Harley ,  Judson R. Holt ,  Yue Ke ,  Rishikesh Krishnan ,  Kern Rim ,  Henry K. Utomo

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/66 ,  H01L29/161 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/423 ,  H01L29/775 ,  H01L29/06 ,  H01L21/306 ,  H01L29/165

CPC classification number: H01L29/7851 ,  B82Y10/00 ,  H01L21/30604 ,  H01L29/0673 ,  H01L29/1037 ,  H01L29/161 ,  H01L29/165 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/6681 ,  H01L29/775 ,  H01L29/7848 ,  H01L29/78696

Abstract: A semiconductor device including at least one suspended channel structure of a silicon including material, and a gate structure present on the suspended channel structure. At least one gate dielectric layer is present surrounding the suspended channel structure, and at least one gate conductor is present on the at least one gate dielectric layer. Source and drain structures may be composed of a silicon and germanium including material. The source and drain structures are in contact with the source and drain region ends of the suspended channel structure through a silicon cladding layer.

Abstract translation: 一种半导体器件，包括至少一个包含硅的悬浮沟道结构，以及存在于悬挂沟道结构上的栅极结构。 至少一个栅极电介质层存在于悬置沟道结构周围，并且至少一个栅极导体存在于至少一个栅极电介质层上。 源极和漏极结构可以由包括硅和锗的材料组成。 源极和漏极结构通过硅包覆层与悬浮沟道结构的源极和漏极端部接触。

公开(公告)号：US09431306B2

公开(公告)日：2016-08-30

申请号：US15075437

申请日：2016-03-21

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Bruce Doris ,  Kangguo Cheng ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L21/02 ,  H01L21/84 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/3105

CPC classification number: H01L21/845 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/02318 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/785

Abstract: A method includes forming a plurality of trenches to define a fin, forming a first layer of insulating material in the trenches, forming a sidewall spacer on opposite sides of the fin above an upper surface of the first layer, removing the first layer and performing a fin-trimming etching process to define a plurality of increased-size trenches. The method also includes forming a first oxidation-blocking layer of insulating material in the increased-size trenches, forming a second layer of insulating material above the oxidation-blocking layer, and performing a thermal anneal process to convert at least a part of the portion of the fin that is in contact with the second layer of insulating material into an oxide fin isolation region.

Abstract translation: 一种方法包括形成多个沟槽以限定翅片，在沟槽中形成绝缘材料的第一层，在第一层的上表面上方的翅片的相对侧上形成侧壁隔离物，去除第一层并执行 翅片修剪蚀刻工艺以限定多个增大尺寸的沟槽。 该方法还包括在增大尺寸的沟槽中形成绝缘材料的第一氧化阻挡层，在氧化阻挡层上方形成第二层绝缘材料，并进行热退火工艺以将部分的至少一部分 与第二绝缘材料层接触的鳍片形成氧化物鳍片隔离区域。

公开(公告)号：US20160225659A1

公开(公告)日：2016-08-04

申请号：US14608729

申请日：2015-01-29

Applicant: GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

Inventor： Ajey Poovannummoottil Jacob ,  Bruce Doris ,  Kangguo Cheng ,  Ali Khakifirooz ,  Kern Rim

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/308 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/76213 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/26506 ,  H01L21/3083 ,  H01L21/31155 ,  H01L21/76224 ,  H01L29/66795

Abstract: One illustrative method disclosed herein includes, among other things, forming a fin in a semiconductor substrate, the fin having a lower first section that contains an oxidation-retarding implant region and an upper second section that is substantially free of the oxidation-retarding implant region, forming a sidewall spacer on opposite sides of the upper portion of the fin, forming a first layer of insulating material adjacent the sidewall spacers and the upper second section of the lower portion of the fin, and, with the first layer of insulating material in position, performing a thermal anneal process to convert the portion of the upper second section of the fin that is in contact with the first layer of insulating material into an oxide fin isolation region positioned under the fin above the lower first section of the fin.

Abstract translation: 本文公开的一种说明性方法包括在半导体衬底中形成翅片，所述翅片具有包含氧化阻滞注入区域的下部第一部分和基本上不含氧化延迟注入区域的上部第二部分 在翅片的上部的相对侧上形成侧壁间隔物，形成邻近侧壁间隔物和鳍片下部的上部第二部分的第一绝缘材料层，并且第一绝缘材料层 位置，进行热退火处理以将与第一绝缘材料层接触的翅片的上部第二部分的部分转换成位于翅片的下部第一部分下方的翅片下方的氧化物翅片隔离区域。

公开(公告)号：US09245981B2

公开(公告)日：2016-01-26

申请号：US14808914

申请日：2015-07-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kangguo Cheng ,  Ramachandra Divakaruni ,  Bruce B. Doris ,  Ali Khakifirooz ,  Edward J. Nowak ,  Kern Rim

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/785

Abstract: An array of stacks containing a semiconductor fins and an oxygen-impermeable cap is formed on a semiconductor substrate with a substantially uniform areal density. Oxygen-impermeable spacers are formed around each stack, and the semiconductor substrate is etched to vertically extend trenches. Semiconductor sidewalls are physically exposed from underneath the oxygen-impermeable spacers. The oxygen-impermeable spacers are removed in regions in which semiconductor fins are not needed. A dielectric oxide material is deposited to fill the trenches. Oxidation is performed to convert a top portion of the semiconductor substrate and semiconductor fins not protected by oxygen-impermeable spacers into dielectric material portions. Upon removal of the oxygen-impermeable caps and remaining oxygen-impermeable spacers, an array including semiconductor fins and dielectric fins is provided. The dielectric fins alleviate variations in the local density of protruding structures, thereby reducing topographical variations in the height of gate level structures to be subsequently formed.