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公开(公告)号：US20190288646A1
公开(公告)日：2019-09-19
申请号：US16428842
申请日：2019-05-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Abdellatif Bellaouar
Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
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公开(公告)号：US10355646B2
公开(公告)日：2019-07-16
申请号：US15967172
申请日：2018-04-30
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Abdellatif Bellaouar
Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
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公开(公告)号：US11675046B2
公开(公告)日：2023-06-13
申请号：US16558095
申请日：2019-08-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Sher Jiung Fang
CPC classification number: G01S7/35 , G01S7/282 , H03F3/245 , H03K5/00006 , H03F2200/451
Abstract: Transmitters having increased efficiency, such as may be useful in millimeter-wave devices. A semiconductor device, comprising a transmitter, comprising a modulator configured to receive a differential input signal having a first frequency and provide a differential modulated signal having the first frequency and a first clock phase; a series comprising one or more frequency multipliers, wherein the series of frequency multipliers is configured to receive the differential modulated signal and provide a differential second signal having a second frequency greater than the first frequency and having a second clock phase; and an output transformer configured to receive the differential second signal and transform the differential second signal to a single-ended output signal. Methods of using such transmitters. Systems for manufacturing devices comprising such transmitters.
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公开(公告)号：US10747254B1
公开(公告)日：2020-08-18
申请号：US16558599
申请日：2019-09-03
Applicant: GLOBALFOUNDRIES INC.
Inventor： Sher Jiun Fang , See Taur Lee
Abstract: The disclosure provides a circuit structure including a current source including at least one FDSOI transistor having a back-gate terminal, wherein the current source generates a current proportionate to an absolute temperature of the circuit structure; a first current mirror electrically coupled to the current source and a gate terminal of a device transistor, wherein the first current mirror applies a gate bias to the device transistor based on a magnitude of the current, and wherein a source or drain terminal of the device transistor includes an output current of the circuit structure; and an adjustable voltage source coupled to the back-gate terminal of the at least one FDSOI transistor of the current source, wherein the adjustable voltage source applies a selected back-gate bias voltage to the back-gate terminal of the at least one FDSOI transistor to adjust the current to compensate for process variations of the device transistor.
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公开(公告)号：US10483917B2
公开(公告)日：2019-11-19
申请号：US16428842
申请日：2019-05-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Abdellatif Bellaouar
Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
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Patent Agency Ranking
公开(公告)号：US20190190453A1
公开(公告)日：2019-06-20
申请号：US15967172
申请日：2018-04-30
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Abdellatif Bellaouar
CPC classification number: H03F1/0205 , H03F3/193 , H03F3/21 , H03F3/45165 , H03F2200/451 , H03F2200/534 , H03F2200/541 , H04B1/04 , H04B2001/0408
Abstract: We disclose apparatus which may provide power amplification in millimeter-wave devices with reduced size and reduced power consumption, and methods of using such apparatus. One such apparatus comprises an input transformer; a first differential pair of injection transistors comprising a first transistor and a second transistor; a first back gate voltage source configured to provide a first back gate voltage to the first transistor; a second back gate voltage source configured to provide a second back gate voltage to the second transistor; a second differential pair of oscillator core transistors comprising a third transistor and a fourth transistor, wherein the third transistor and the fourth transistor are cross-coupled; a third back gate voltage source configured to provide a third back gate voltage to the third transistor; a fourth back gate voltage source configured to provide a fourth back gate voltage to the fourth transistor; and an output transformer.
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公开(公告)号：US20210063531A1
公开(公告)日：2021-03-04
申请号：US16558095
申请日：2019-08-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Sher Jiung Fang
Abstract: Transmitters having increased efficiency, such as may be useful in millimeter-wave devices. A semiconductor device, comprising a transmitter, comprising a modulator configured to receive a differential input signal having a first frequency and provide a differential modulated signal having the first frequency and a first clock phase; a series comprising one or more frequency multipliers, wherein the series of frequency multipliers is configured to receive the differential modulated signal and provide a differential second signal having a second frequency greater than the first frequency and having a second clock phase; and an output transformer configured to receive the differential second signal and transform the differential second signal to a single-ended output signal. Methods of using such transmitters. Systems for manufacturing devices comprising such transmitters.
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公开(公告)号：US20200313269A1
公开(公告)日：2020-10-01
申请号：US16835303
申请日：2020-03-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Sher Jiung Fang , Abdellatif Bellaouar
IPC: H01P5/12 , H03F3/24 , H03K5/01 , H03K17/687
Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.
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9.发明申请公开(公告)号：US20190296720A1
公开(公告)日：2019-09-26
申请号：US15928910
申请日：2018-03-22
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Abdellatif Bellaouar
IPC: H03K5/00 , H03K17/687 , H03D7/14
Abstract: We disclose frequency doublers for use in millimeter-wave devices. One such frequency doubler comprises at least one passive mixer comprising at least one of the following: at least one transistor configured to receive a back gate voltage; at least one first input driver circuit; and two second input driver circuits. We also disclose a method comprising determining a target output voltage of a frequency doubler comprising at least one passive mixer comprising at least one transistor configured to receive a back gate voltage; determining an output voltage of the frequency doubler; increasing a back gate voltage of the at least one transistor, in response to determining that the output voltage is below the target output voltage; and decreasing the back gate voltage of the at least one transistor, in response to determining that the output voltage is above the target output voltage.
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公开(公告)号：US11114736B2
公开(公告)日：2021-09-07
申请号：US16835303
申请日：2020-03-31
Applicant: GLOBALFOUNDRIES INC.
Inventor： See Taur Lee , Sher Jiung Fang , Abdellatif Bellaouar
Abstract: Power combiners having increased output power, such as may be useful in millimeter-wave devices. The power combiner comprise at least two channels, wherein each channel comprises a phase alignment circuit, wherein the phase alignment circuit comprises a first differential input subcircuit comprising a first inverter and a second inverter, and a second differential input subcircuit comprising a third inverter and a fourth inverter, wherein the first inverter, the second inverter, the third inverter, and the fourth inverter each comprise a PMOS transistor and an NMOS transistor each having an adjustable back gate bias voltage. By adjusting the back gate bias voltage, the phases of the signal through each channel may be aligned, which may increase the output power of the power combiner. Methods of increasing output power of such power combiners. Systems for manufacturing devices comprising such power combiners.
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