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公开(公告)号:US10600474B2
公开(公告)日:2020-03-24
申请号:US16424605
申请日:2019-05-29
Applicant: GLOBALFOUNDRIES INC.
Inventor: Sreenivasula Reddy Dhani Reddy , Sreejith Chidambaran , Binu Jose , Venkatraghavan Bringivijayaraghavan
IPC: G11C11/419 , G11C11/412 , G11C11/408 , G11C7/12 , H03K19/1776
Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.
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公开(公告)号:US10381069B1
公开(公告)日:2019-08-13
申请号:US15891619
申请日:2018-02-08
Applicant: GLOBALFOUNDRIES INC.
Inventor: Sreenivasula Reddy Dhani Reddy , Sreejith Chidambaran , Binu Jose , Venkatraghavan Bringivijayaraghavan
IPC: G11C11/419 , G11C11/412 , G11C7/12 , G11C11/408 , H03K19/177
Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.
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公开(公告)号:US20190279708A1
公开(公告)日:2019-09-12
申请号:US16424605
申请日:2019-05-29
Applicant: GLOBALFOUNDRIES INC.
Inventor: Sreenivasula Reddy Dhani Reddy , Sreejith Chidambaran , Binu Jose , Venkatraghavan Bringivijayaraghavan
IPC: G11C11/412 , G11C11/408 , G11C11/419 , G11C7/12
Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.
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公开(公告)号:US20190244658A1
公开(公告)日:2019-08-08
申请号:US15891619
申请日:2018-02-08
Applicant: GLOBALFOUNDRIES INC.
Inventor: Sreenivasula Reddy Dhani Reddy , Sreejith Chidambaran , Binu Jose , Venkatraghavan Bringivijayaraghavan
IPC: G11C11/412 , G11C11/419 , G11C11/408 , G11C7/12
CPC classification number: G11C11/412 , G11C7/12 , G11C11/4085 , G11C11/419 , H03K19/1776
Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.
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公开(公告)号:US10217507B2
公开(公告)日:2019-02-26
申请号:US15345544
申请日:2016-11-08
Applicant: GLOBALFOUNDRIES INC.
IPC: G11C11/00 , G11C11/419 , G11C7/22
Abstract: The present disclosure relates to a circuit, including a first transistor with a drain connected to a capacitor, a gate connected to an input of an inverter and a source connected to ground, a second transistor with a drain connected to the capacitor and a gate connected to the input of the inverter, a third transistor with a source connected to an output of the inverter, a drain connected to a source of the second transistor, and a gate connected to the input of the inverter, and a fourth transistor with a source connected to the source of the third transistor, a drain connected to ground, and a gate connected to the capacitor.
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公开(公告)号:US20180130521A1
公开(公告)日:2018-05-10
申请号:US15345544
申请日:2016-11-08
Applicant: GLOBALFOUNDRIES INC.
IPC: G11C11/419
CPC classification number: G11C11/419 , G11C7/22
Abstract: The present disclosure relates to a circuit, including a first transistor with a drain connected to a capacitor, a gate connected to an input of an inverter and a source connected to ground, a second transistor with a drain connected to the capacitor and a gate connected to the input of the inverter, a third transistor with a source connected to an output of the inverter, a drain connected to a source of the second transistor, and a gate connected to the input of the inverter, and a fourth transistor with a source connected to the source of the third transistor, a drain connected to ground, and a gate connected to the capacitor.
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