Write assist
    1.
    发明授权

    公开(公告)号:US10600474B2

    公开(公告)日:2020-03-24

    申请号:US16424605

    申请日:2019-05-29

    Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.

    Write assist
    2.
    发明授权

    公开(公告)号:US10381069B1

    公开(公告)日:2019-08-13

    申请号:US15891619

    申请日:2018-02-08

    Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.

    WRITE ASSIST
    3.
    发明申请
    WRITE ASSIST 审中-公开

    公开(公告)号:US20190279708A1

    公开(公告)日:2019-09-12

    申请号:US16424605

    申请日:2019-05-29

    Abstract: A circuit includes a core having a memory array. The memory array includes memory cells and bitlines, and is arranged in columns. The core includes a metallization layer having connections to the memory array, which is devoid of memory cells. Digit lines are connected to the bitlines of a column of the memory array. A write driver is connected to the digit lines. A write assist circuit is connected to the write driver. The write assist circuit maintains a voltage on the digit lines prior to write operations and provides a boost voltage to the digit lines during write operations. A wire bridge located in the metallization layer of the core connects the write assist circuit to the write driver.

    Bending circuit for static random access memory (SRAM) self-timer

    公开(公告)号:US10217507B2

    公开(公告)日:2019-02-26

    申请号:US15345544

    申请日:2016-11-08

    Abstract: The present disclosure relates to a circuit, including a first transistor with a drain connected to a capacitor, a gate connected to an input of an inverter and a source connected to ground, a second transistor with a drain connected to the capacitor and a gate connected to the input of the inverter, a third transistor with a source connected to an output of the inverter, a drain connected to a source of the second transistor, and a gate connected to the input of the inverter, and a fourth transistor with a source connected to the source of the third transistor, a drain connected to ground, and a gate connected to the capacitor.

    BENDING CIRCUIT FOR STATIC RANDOM ACCESS MEMORY (SRAM) SELF-TIMER

    公开(公告)号:US20180130521A1

    公开(公告)日:2018-05-10

    申请号:US15345544

    申请日:2016-11-08

    CPC classification number: G11C11/419 G11C7/22

    Abstract: The present disclosure relates to a circuit, including a first transistor with a drain connected to a capacitor, a gate connected to an input of an inverter and a source connected to ground, a second transistor with a drain connected to the capacitor and a gate connected to the input of the inverter, a third transistor with a source connected to an output of the inverter, a drain connected to a source of the second transistor, and a gate connected to the input of the inverter, and a fourth transistor with a source connected to the source of the third transistor, a drain connected to ground, and a gate connected to the capacitor.

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