公开(公告)号：US10297546B2

公开(公告)日：2019-05-21

申请号：US15652594

申请日：2017-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erdem Kaltalioglu ,  Ronald G. Filippi, Jr. ,  Ping-Chuan Wang ,  Cathryn Christiansen

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/308 ,  H01L21/3065 ,  H01L23/522 ,  H01L21/306

Abstract: Interconnect structures for a security application and methods of forming an interconnect structure for a security application. A sacrificial masking layer is formed that includes a plurality of particles arranged with a random distribution. An etch mask is formed using the sacrificial masking layer. A hardmask is etched while masked by the etch mask to define a plurality of mask features arranged with the random distribution. A dielectric layer is etched while masked by the hardmask to form a plurality of openings in the dielectric layer that are arranged at the locations of the mask features. The openings in the dielectric layer are filled with a conductor to define a plurality of conductive features.

公开(公告)号：US20190027433A1

公开(公告)日：2019-01-24

申请号：US15652594

申请日：2017-07-18

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Erdem Kaltalioglu ,  Ronald G. Filippi, JR. ,  Ping-Chuan Wang ,  Cathryn Christiansen

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/308 ,  H01L21/768

Abstract: Interconnect structures for a security application and methods of forming an interconnect structure for a security application. A sacrificial masking layer is formed that includes a plurality of particles arranged with a random distribution. An etch mask is formed using the sacrificial masking layer. A hardmask is etched while masked by the etch mask to define a plurality of mask features arranged with the random distribution. A dielectric layer is etched while masked by the hardmask to form a plurality of openings in the dielectric layer that are arranged at the locations of the mask features. The openings in the dielectric layer are filled with a conductor to define a plurality of conductive features.