公开(公告)号：US09613909B2

公开(公告)日：2017-04-04

申请号：US14824181

申请日：2015-08-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Sunil Kumar Singh ,  Ravi Prakash Srivastava ,  Nicholas Robert Stokes

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/2885 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76895 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53266 ,  H01L23/535

Abstract: Metal filling processes for semiconductor devices and methods of fabricating semiconductor devices. One method includes, for instance: obtaining a wafer with at least one contact opening; depositing a metal alloy into at least a portion of the at least one contact opening; separating the metal alloy into a first metal layer and a second metal layer; depositing a barrier stack over the wafer; forming at least one trench opening; forming at least one via opening; and depositing at least one metal material into the trench openings and via openings. An intermediate semiconductor device is also disclosed.