公开(公告)号：US10475904B2

公开(公告)日：2019-11-12

申请号：US15868004

申请日：2018-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hiroaki Niimi ,  Steven Bentley ,  Romain Lallement ,  Brent A. Anderson ,  Junli Wang ,  Muthumanickam Sankarapandian

IPC: H01L29/66 ,  H01L29/778 ,  H01L27/092 ,  H01L21/8234 ,  H01L27/11 ,  H01L21/8238

Abstract: A method of forming a merged source/drain region is disclosed that includes forming first and second VOCS structures above a semiconductor substrate, forming a recess in the substrate between the first and second VOCS structures and forming a P-type-doped semiconductor material in the recess. In this particular example, the method also includes removing a first substantially horizontally-oriented portion of the P-type-doped semiconductor material from within the recess while leaving a second substantially horizontally-oriented portion of the P-type-doped semiconductor material remaining in the recess and forming a substantially horizontally-oriented N-type-doped semiconductor material in the recess laterally adjacent the second substantially horizontally-oriented portion of the P-type-doped semiconductor material, wherein the substantially horizontally-oriented N-type-doped semiconductor material physically engages the second substantially horizontally-oriented portion of the P-type-doped semiconductor material along an interface within the merged source/drain region.

公开(公告)号：US20190214484A1

公开(公告)日：2019-07-11

申请号：US15868004

申请日：2018-01-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Hiroaki Niimi ,  Steven Bentley ,  Romain Lallement ,  Brent A. Anderson ,  Junli Wang ,  Muthumanickam Sankarapandian

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/8238 ,  H01L21/8234 ,  H01L27/11 ,  H01L27/092

Abstract: A method of forming a merged source/drain region is disclosed that includes forming first and second VOCS structures above a semiconductor substrate, forming a recess in the substrate between the first and second VOCS structures and forming a P-type-doped semiconductor material in the recess. In this particular example, the method also includes removing a first substantially horizontally-oriented portion of the P-type-doped semiconductor material from within the recess while leaving a second substantially horizontally-oriented portion of the P-type-doped semiconductor material remaining in the recess and forming a substantially horizontally-oriented N-type-doped semiconductor material in the recess laterally adjacent the second substantially horizontally-oriented portion of the P-type-doped semiconductor material, wherein the substantially horizontally-oriented N-type-doped semiconductor material physically engages the second substantially horizontally-oriented portion of the P-type-doped semiconductor material along an interface within the merged source/drain region.