公开(公告)号：US09362279B1

公开(公告)日：2016-06-07

申请号：US14609171

申请日：2015-01-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Andy Wei ,  William James Taylor ,  Ryan Ryoung-han Kim ,  Kwan-Yong Lim ,  Chanro Park

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/417

CPC classification number: H01L27/0886 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/28518 ,  H01L21/76224 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/66545

Abstract: A method of contact formation and resulting structure is disclosed. The method includes providing a starting semiconductor structure, the structure including a semiconductor substrate with fins coupled to the substrate, a bottom portion of the fins being surrounded by a first dielectric layer, dummy gates covering a portion of each of the fins, spacers and a cap for each dummy gate, and a lined trench between the gates extending to and exposing the first dielectric layer. The method further includes creating an epitaxy barrier of hard mask material between adjacent fins in the trench, creating N and P type epitaxial material on the fins adjacent opposite sides of the barrier, and creating sacrificial semiconductor epitaxy over the N and P type epitaxial material, such that subsequent removal thereof can be done selective to the N and P type of epitaxial material. The resulting structure has replacement (conductive) gates, conductive material above the N and P type epitaxy, and a contact to the conductive material for each of N and P type epitaxy.

Abstract translation: 公开了接触形成方法和结构。 该方法包括提供起始半导体结构，该结构包括具有耦合到基板的翅片的半导体基板，翅片的底部被第一介电层包围，覆盖每个翅片的一部分的虚拟栅极，间隔件和 每个虚拟栅极的盖，以及延伸到第一介电层并暴露第一介电层的栅极之间的衬里沟槽。 该方法还包括在沟槽中的相邻散热片之间产生硬掩模材料的外延屏障，在邻近屏障相对侧的鳍片上产生N和P型外延材料，并在N和P型外延材料上产生牺牲半导体外延， 使得随后的去除可以对N型和P型外延材料选择性地进行。 所得结构具有替代（导电）栅极，N和P型外延上方的导电材料，以及N和P型外延中的每一个与导电材料的接触。