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公开(公告)号：US11811390B2
公开(公告)日：2023-11-07
申请号：US16403639
申请日：2019-05-06
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： You Qian , Humberto Campanella Pineda , Rakesh Kumar
Abstract: According to various embodiments, there is provided a resonator device that includes a first interdigital transducer and a second interdigital transducer that is electrically connected to the first interdigital transducer. Both the first interdigital transducer and the second interdigital transducer are configured to resonate at a common frequency. At least one of an electrode width and an electrode pitch of the first interdigital transducer is different from the respective electrode width and/or electrode pitch of the second interdigital transducer such that spurious peaks of the resonator device are lower in amplitude as compared to spurious peaks of each of the first interdigital transducer and the second interdigital transducer.
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2.发明申请公开(公告)号：US20170313577A1
公开(公告)日：2017-11-02
申请号：US15140906
申请日：2016-04-28
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Humberto Campanella Pineda , Rakesh Kumar , Zouhair Sbiaa , Nagarajan Ranganathan , Ramachandramurthy Pradeep Yelehanka
CPC classification number: B81B7/0064 , B81B7/0022 , H01L23/522
Abstract: Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated circuit further includes a MEMS device over the ground plane. Also, the integrated circuit includes a conductive pillar through the dielectric layer and in contact with the ground plane. The integrated circuit includes a metallic thin film over the MEMS device and in contact with the conductive pillar, wherein the metallic thin film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device. Further, the integrated circuit includes an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.
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公开(公告)号：US10476480B1
公开(公告)日：2019-11-12
申请号：US16029223
申请日：2018-07-06
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Humberto Campanella-Pineda , You Qian , Rakesh Kumar
IPC: H03H9/64 , H03H9/46 , H03H9/54 , H03H9/72 , H03B5/30 , G01K7/32 , H03H9/24 , H03H3/007 , H03H9/02
Abstract: A dual-mode resonator, devices employing the dual-mode resonator, and the methods of making the resonator and the devices are disclosed. Embodiments include a dual-mode resonator including a semiconductor substrate; a material on the semiconductor substrate, having a cavity formed therein; a seed layer over the cavity in a V-shape, wherein sides of the V-shape form an angle of 15 to 25 degrees with a horizontal line; a bottom electrode on the seed layer; an acoustic layer on the bottom electrode; a top electrode on the acoustic layer; and a mass loading layer on the top electrode; and a cap over the dual-mode resonator.
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4.发明授权公开(公告)号：US10358340B2
公开(公告)日：2019-07-23
申请号：US15140906
申请日：2016-04-28
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Humberto Campanella-Pineda , Rakesh Kumar , Zouhair Sbiaa , Nagarajan Ranganathan , Ramachandramurthy Pradeep Yelehanka
IPC: H01L23/552 , B81B7/00 , H01L23/522
Abstract: Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated circuit further includes a MEMS device over the ground plane. Also, the integrated circuit includes a conductive pillar through the dielectric layer and in contact with the ground plane. The integrated circuit includes a metallic thin film over the MEMS device and in contact with the conductive pillar, wherein the metallic thin film, the conductive pillar and the ground plane form an electromagnetic shielding structure surrounding the MEMS device. Further, the integrated circuit includes an acoustic shielding structure over the substrate and adjacent the electromagnetic shielding structure.
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公开(公告)号：US10301171B1
公开(公告)日：2019-05-28
申请号：US15810163
申请日：2017-11-13
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Siddharth Chakravarty , Pradeep Yelehanka , Sharath Poikayil Poikayil Satheesh , Chun Hoe Yik , Rakesh Kumar , Natarajan Rajasekaran
IPC: B81B3/00 , B81B7/00 , B81B7/02 , B81C1/00 , H01L21/52 , H01L21/56 , H01L23/48 , H01L21/768 , H01L23/522
Abstract: A microelectromechanical system (MEMS) device is disclosed. The MEMS device includes a device substrate with a top device surface and a bottom device surface having a MEMS component in a device region. A top device bond ring is disposed on the top device surface surrounding the device region and a bottom device bond ring is disposed on the bottom device surface surrounding the device region. A top cap with a top cap bond ring is bonded to the top device bond ring by a top eutectic bond and a bottom cap with a bottom cap bond ring is bonded to the bottom device bond ring by a bottom eutectic bond. The eutectic bonds encapsulate the MEMS device.
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Patent Agency Ranking
公开(公告)号：US20170320093A1
公开(公告)日：2017-11-09
申请号：US15278910
申请日：2016-09-28
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Rakesh Kumar , Jaime Viegas , Mateusz Tomasz Madzik
IPC: B06B1/06 , H01L41/047
CPC classification number: B06B1/0629 , B06B1/0238 , B06B1/0622 , B06B2201/55 , G10K11/345 , H01L41/047 , H01L41/0472 , H01L41/0805 , H01L41/0973
Abstract: Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from the first electrode and defines a space between the first electrode and the second electrode. A piezoelectric material is disposed in the space. Also provided are arrays of pMUTs wherein individual pMUTs have first electrode portions operably associated with array rows and second electrode portions operably associated with array columns.
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公开(公告)号：US09550668B1
公开(公告)日：2017-01-24
申请号：US14834498
申请日：2015-08-25
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Jia Jie Xia , Nagarajan Ranganathan , Rakesh Kumar , Aveek Nath Chatterjee
CPC classification number: B81B7/02 , B81B7/007 , B81B2201/0228 , B81B2201/0235 , B81B2201/0264 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C2203/0109 , H01L29/84
Abstract: Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.
Abstract translation: 提供用于压力感测和惯性感测的集成MEMS器件，用于制造这种集成器件的方法，以及用于制造垂直集成的MEMS压力传感器/惯性传感器器件的方法。 在一个示例中，用于制造用于压力和惯性感测的集成装置的方法包括在半导体衬底的第一侧上形成MEMS压力传感器。 该方法还包括在半导体衬底的第二侧上形成MEMS惯性传感器。 半导体衬底的第二面与半导体衬底的第一侧相对。
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公开(公告)号：US10530334B2
公开(公告)日：2020-01-07
申请号：US15976597
申请日：2018-05-10
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Humberto Campanella-Pineda , You Qian , Vibhor Jain , Anthony Stamper , Rakesh Kumar
Abstract: Methods of forming a shear-mode acoustic wave filter on V-shaped grooves of a [100] crystal orientation Si layer over a substrate and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] crystal orientation Si layer over a substrate; and forming a shear-mode acoustic wave filter over the V-shaped grooves, the shear-mode acoustic wave filter including a first metal layer, a thin-film piezoelectric layer, and a second metal layer, wherein the second metal layer is an IDT pattern or a sheet.
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9.发明授权公开(公告)号：US10277194B2
公开(公告)日：2019-04-30
申请号：US15706304
申请日：2017-09-15
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Humberto Campanella-Pineda , You Qian , Rakesh Kumar
Abstract: Methods of designing a BAW resonator having fractal geometry and the resulting devices are provided. Embodiments include providing a fractal generator function; providing three or more line segments; applying the fractal generator function to each of the three or more line segments to form three or more respective fractal line segments, each of the three or more fractal line segments having a respective start point and endpoint and at least four sub-segments; and connecting an endpoint of each one of the three or more fractal line segments to a successive start point of another of the three or more fractal line segments to form a closed-loop contour line representative of an area of an electrode of a BAW resonator, the closed-loop contour line having a fractal dimension that is greater than one and less than two.
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公开(公告)号：US09620373B1
公开(公告)日：2017-04-11
申请号：US14985800
申请日：2015-12-31
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Siddharth Chakravarty , Rakesh Kumar , Pradeep Yelehanka , Sharath Poikayil Satheesh , Natarajan Rajasekaran
IPC: H01L21/467 , H01L21/306 , H01L21/308 , H01L21/285 , H01L29/40 , H01L21/443
CPC classification number: H01L21/443 , B81B2207/098 , B81C1/00095 , H01L21/2855 , H01L21/467 , H01L29/401
Abstract: Methods for fabricating semiconductor or micromachined devices with metal structures and methods for forming self-aligned deep cavity metal structures are provided. A method for fabricating a device with a metal structure includes patterning a mask with an opening perimeter bounding an opening over a substrate. The method includes performing an isotropic etch to etch a shallow portion of the substrate exposed by the opening and a shallow portion of the substrate underlying the opening perimeter of the mask. The method also includes performing an anisotropic etch to etch a deep portion of the substrate exposed by the mask opening and a deep portion of the substrate underlying the opening perimeter of the mask to form a cavity having a bottom surface. Further, the method includes depositing metal over the mask, into the mask opening and onto the bottom surface, wherein the metal on the bottom surface forms the metal structure.
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