公开(公告)号：US20230122564A1

公开(公告)日：2023-04-20

申请号：US17504558

申请日：2021-10-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vivek Raj ,  Bhuvan R. Nandagopal ,  Shivraj G. Dharne

IPC: G11C11/419 ,  G11C11/412 ,  G11C11/418

Abstract: Disclosed is a memory structure that includes wordlines (WL) and cell supply lines (CSL) positioned between and parallel to voltage boost lines (VBLs). The VBLs enable capacitive coupling-based voltage boosting of the adjacent WL and/or CSL depending on whether a read or write assist is required. During a read operation, all VBLs for a selected row can be charged to create coupling capacitances with the WL and with the CSL and thereby boost both the wordline voltage (Vwl) and the cell supply voltage (Vcs) for a read assist. During a write operation, one VBL adjacent to the WL for a selected row can be charged to create a coupling capacitance with the WL only and thereby boost the Vwl for a write assist. The coupling capacitances created by charging VBLs in the structure is self-adjusting in that as the length of the rows increase so do the potential coupling capacitances.

公开(公告)号：US11900996B2

公开(公告)日：2024-02-13

申请号：US17504558

申请日：2021-10-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vivek Raj ,  Bhuvan R. Nandagopal ,  Shivraj G. Dharne

IPC: G11C11/419 ,  G11C11/418 ,  G11C11/412

CPC classification number: G11C11/419 ,  G11C11/412 ,  G11C11/418

Abstract: Disclosed is a memory structure that includes wordlines (WL) and cell supply lines (CSL) positioned between and parallel to voltage boost lines (VBLs). The VBLs enable capacitive coupling-based voltage boosting of the adjacent WL and/or CSL depending on whether a read or write assist is required. During a read operation, all VBLs for a selected row can be charged to create coupling capacitances with the WL and with the CSL and thereby boost both the wordline voltage (Vwl) and the cell supply voltage (Vcs) for a read assist. During a write operation, one VBL adjacent to the WL for a selected row can be charged to create a coupling capacitance with the WL only and thereby boost the Vwl for a write assist. The coupling capacitances created by charging VBLs in the structure is self-adjusting in that as the length of the rows increase so do the potential coupling capacitances.