公开(公告)号：US10468549B2

公开(公告)日：2019-11-05

申请号：US15708162

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Hsin-Chiao Fang ,  Cheng-Hsueh Lu ,  Cheng-Hung Lin ,  Chi-Hao Cheng ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

公开(公告)号：US10319879B2

公开(公告)日：2019-06-11

申请号：US15453873

申请日：2017-03-08

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hung Lin ,  Jeng-Jie Huang ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/32 ,  H01L33/02

Abstract: A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0≤x1 x2.

公开(公告)号：US20140103367A1

公开(公告)日：2014-04-17

申请号：US13835367

申请日：2013-03-15

Applicant: GENESIS PHOTONICS INC.

Inventor： Cheng-Hung Lin ,  Yu-Yun Lo ,  Cheng-Yen Chen ,  Yu-Hung Lai

IPC: H01L33/36 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0095 ,  H01L2933/0025

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。

公开(公告)号：US09153743B2

公开(公告)日：2015-10-06

申请号：US13835367

申请日：2013-03-15

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hung Lin ,  Yu-Yun Lo ,  Cheng-Yen Chen ,  Yu-Hung Lai

IPC: H01L33/36 ,  H01L33/00 ,  H01L27/15

CPC classification number: H01L33/36 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0095 ,  H01L2933/0025

Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.

Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。

公开(公告)号：US20180083162A1

公开(公告)日：2018-03-22

申请号：US15708162

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Hsin-Chiao Fang ,  Cheng-Hsueh Lu ,  Cheng-Hung Lin ,  Chi-Hao Cheng ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

公开(公告)号：US20170263814A1

公开(公告)日：2017-09-14

申请号：US15453873

申请日：2017-03-08

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hung Lin ,  Jeng-Jie Huang ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/02 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0≦x1 x2.