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    LIGHT EMITTING DIODE
    1.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号：US20160329461A1

    公开(公告)日：2016-11-10

    申请号：US15135573

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/10 ,  H01L33/62 ,  H01L33/24 ,  H01L33/38

    CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

    Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

    Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。

    GRAPHICAL MICROSTRUCTURE OF LIGHT EMITTING DIODE SUBSTRATE
    2.
    发明申请
    GRAPHICAL MICROSTRUCTURE OF LIGHT EMITTING DIODE SUBSTRATE 审中-公开
    发光二极管基板的图形微结构

    公开(公告)号：US20160111597A1

    公开(公告)日：2016-04-21

    申请号：US14886097

    申请日：2015-10-19

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Pin Chen

    IPC: H01L33/20 ,  H01L33/42 ,  H01L33/32

    CPC classification number: H01L33/10 ,  H01L33/12

    Abstract: The invention relates to a patterned microstructure of a light emitting diode (LED) substrate. The substrate is provided with patterned microstructures arranged in an array. Each patterned microstructure includes a bottom surface and a lateral surface adjacent to the bottom surface. There is an angle θ between the lateral surface and the bottom surface, where 0°

    Abstract translation: 本发明涉及发光二极管（LED）衬底的图案化微结构。 衬底设置有排列成阵列的图案化微结构。 每个图案化的微结构包括底表面和与底表面相邻的侧表面。 有角度和角度 在侧面和底面之间，其中0°<θ; <90°。 底面的长度范围在2.5微米与2.8微米之间。 远离底面的侧面的一端逐渐收缩成交叉点，交叉点和底面之间的高度范围在1.5微米与1.9微米之间。 因此，本发明可以通过循环地且交替地布置在LED基板上优化图案化微结构的尺寸来有效地提高LED的光提取效率。

    LIGHT-EMITTING DIODE CHIP
    5.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20180248078A1

    公开(公告)日：2018-08-30

    申请号：US15965999

    申请日：2018-04-30

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/38 ,  H01L33/14

    CPC classification number: H01L33/38 ,  H01L33/145

    Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

    LIGHT-EMITTING DIODE CHIP
    9.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：US20160315238A1

    公开(公告)日：2016-10-27

    申请号：US15135574

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/62 ,  H01L33/36 ,  H01L33/44

    CPC classification number: H01L33/38 ,  H01L33/145

    Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

    Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一类掺杂半导体层，第二类掺杂半导体层和它们之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层位于第二类掺杂半导体层上。 电流阻挡层在电流扩散层和第二类掺杂半导体层之间。 第二电极在电流扩展层上并电连接到第二类掺杂半导体层。 电流阻挡层具有面向半导体器件层的第一表面，反向到半导体器件层的第二表面和第一倾斜表面。 第一倾斜表面连接在第一表面和第二表面之间并相对于第一表面和第二表面倾斜。

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