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    NITROGEN-CONTAINING SEMICONDUCTOR DEVICE
    2.
    发明申请
    NITROGEN-CONTAINING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180083108A1

    公开(公告)日：2018-03-22

    申请号：US15708156

    申请日：2017-09-19

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Hsueh Lu ,  Hsin-Chiao Fang ,  Chi-Hao Cheng ,  Chih-Feng Lu ,  Chi-Feng Huang

    IPC: H01L29/205 ,  H01L33/32 ,  H01L33/04

    CPC classification number: H01L29/205 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32

    Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0≦x≦1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm−3 and carbon having a concentration greater than 5×1017 cm−3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0≦y≦1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

    SEMICONDUCTOR STRUCTURE
    5.
    发明申请
    SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20170263814A1

    公开(公告)日：2017-09-14

    申请号：US15453873

    申请日：2017-03-08

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Hung Lin ,  Jeng-Jie Huang ,  Chi-Feng Huang

    IPC: H01L33/14 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/14 ,  H01L33/02 ,  H01L33/32 ,  H01L33/325

    Abstract: A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The hole supply layer is disposed between the light emitting layer and the second-type semiconductor layer, and the hole supply layer includes a first hole supply layer and a second hole supply layer. The first hole supply layer is disposed between the light emitting layer and the second hole supply layer, and a chemical formula of the first hole supply layer is Alx1Iny1Ga1-x1-y1N, wherein 0≦x1 x2.

    SEMICONDUCTOR STRUCTURE
    6.
    发明申请
    SEMICONDUCTOR STRUCTURE 审中-公开
    半导体结构

    公开(公告)号：US20160072010A1

    公开(公告)日：2016-03-10

    申请号：US14940175

    申请日：2015-11-13

    Applicant: Genesis Photonics Inc.

    Inventor： Chi-Feng Huang ,  Sheng-Han Tu

    IPC: H01L33/12 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/12 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

    Abstract: A semiconductor structure includes a substrate, an aluminum nitride layer, plural of grading stress buffer layers and a superlattice structure layer. The aluminum nitride layer is disposed on the substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al1−xGaxN, wherein the x value is increased from one side near the substrate to a side away from the substrate, and 0≦x≦1. A chemical formula of the transition layer is the same as the chemical formula of a side surface of the grading layer away from the substrate. The chemical formula of the transition layer of the grading stress buffer layer furthest from the substrate is GaN. The superlattice structure layer is disposed between the aluminum nitride layer and the grading stress buffer layers.

    Abstract translation: 半导体结构包括基板，氮化铝层，多个分级应力缓冲层和超晶格结构层。 氮化铝层设置在基板上。 分级应力缓冲层设置在氮化铝层上。 每个分级应力缓冲层包括依次层叠的分级层和过渡层。 分级层的化学式为Al1-xGaxN，其中x值从衬底附近的一侧增加到远离衬底的一侧，并且0和n 1; x＆lt; 1; 1。 过渡层的化学式与分级层的离开基板的侧面的化学式相同。 距基板最远的分级应力缓冲层的过渡层的化学式为GaN。 超晶格结构层设置在氮化铝层和分级应力缓冲层之间。

    SEMICONDUCTOR STRUCTURE
    8.
    发明申请
    SEMICONDUCTOR STRUCTURE 审中-公开
    半导体结构

    公开(公告)号：US20150380605A1

    公开(公告)日：2015-12-31

    申请号：US14707010

    申请日：2015-05-08

    Applicant: Genesis Photonics Inc.

    Inventor： Chi-Hao Cheng ,  Chi-Feng Huang ,  Sheng-Han Tu

    IPC: H01L33/12 ,  H01L33/32

    CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02617

    Abstract: A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer.The doped insertion layer is disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer. A chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0≦x≦1, 0≦y≦1.

    Abstract translation: 半导体结构包括衬底，第一未掺杂半导体层，第二未掺杂半导体层和至少一个掺杂插入层。 第一未掺杂半导体层设置在基板上。 第二未掺杂半导体层设置在第一未掺杂半导体层上。 掺杂插入层设置在第一未掺杂半导体层和第二未掺杂半导体层之间。 掺杂插层的化学式为In x Al y Ga 1-x-y N，其中0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1。

    SEMICONDUCTOR STRUCTURE
    9.
    发明申请
    SEMICONDUCTOR STRUCTURE 有权
    半导体结构

    公开(公告)号：US20150333220A1

    公开(公告)日：2015-11-19

    申请号：US14707009

    申请日：2015-05-08

    Applicant: Genesis Photonics Inc.

    Inventor： Sheng-Han Tu ,  Chi-Feng Huang

    IPC: H01L33/12 ,  H01L33/32 ,  H01L23/00 ,  H01L29/20 ,  H01L29/205

    CPC classification number: H01L33/12 ,  H01L23/562 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor structure includes a silicon substrate, a buffer layer, a nitride-based epitaxial structure layer and multiple discontinuous strain-releasing layers. The buffer layer is disposed on the silicon substrate. The nitride-based epitaxial structure layer is disposed on the buffer layer. The discontinuous strain-releasing layers are disposed between the silicon substrate and the nitride-based epitaxial structure layer, wherein a material of the discontinuous strain-releasing layers is silicon nitride.

    Abstract translation: 半导体结构包括硅衬底，缓冲层，氮化物基外延结构层和多个不连续的应变释放层。 缓冲层设置在硅衬底上。 基于氮化物的外延结构层设置在缓冲层上。 不连续的应变释放层设置在硅衬底和氮化物基外延结构层之间，其中不连续应变释放层的材料是氮化硅。

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