公开(公告)号：US20150380605A1

公开(公告)日：2015-12-31

申请号：US14707010

申请日：2015-05-08

Applicant: Genesis Photonics Inc.

Inventor： Chi-Hao Cheng ,  Chi-Feng Huang ,  Sheng-Han Tu

IPC: H01L33/12 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02617

Abstract: A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer.The doped insertion layer is disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer. A chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0≦x≦1, 0≦y≦1.

Abstract translation: 半导体结构包括衬底，第一未掺杂半导体层，第二未掺杂半导体层和至少一个掺杂插入层。 第一未掺杂半导体层设置在基板上。 第二未掺杂半导体层设置在第一未掺杂半导体层上。 掺杂插入层设置在第一未掺杂半导体层和第二未掺杂半导体层之间。 掺杂插层的化学式为In x Al y Ga 1-x-y N，其中0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1。

公开(公告)号：US20180083162A1

公开(公告)日：2018-03-22

申请号：US15708162

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Hsin-Chiao Fang ,  Cheng-Hsueh Lu ,  Cheng-Hung Lin ,  Chi-Hao Cheng ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/02 ,  H01L33/06 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

公开(公告)号：US20210391519A1

公开(公告)日：2021-12-16

申请号：US17344872

申请日：2021-06-10

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chi-Hao Cheng

IPC: H01L33/62 ,  H01L33/22 ,  H01L33/46 ,  H01L33/40

Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer. A manufacturing method of the light emitting device is also provided.

公开(公告)号：US20180083108A1

公开(公告)日：2018-03-22

申请号：US15708156

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hsueh Lu ,  Hsin-Chiao Fang ,  Chi-Hao Cheng ,  Chih-Feng Lu ,  Chi-Feng Huang

IPC: H01L29/205 ,  H01L33/32 ,  H01L33/04

CPC classification number: H01L29/205 ,  H01L33/04 ,  H01L33/12 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0≦x≦1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm−3 and carbon having a concentration greater than 5×1017 cm−3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0≦y≦1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

公开(公告)号：US10468549B2

公开(公告)日：2019-11-05

申请号：US15708162

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Hsin-Chiao Fang ,  Cheng-Hsueh Lu ,  Cheng-Hung Lin ,  Chi-Hao Cheng ,  Chi-Feng Huang

IPC: H01L33/14 ,  H01L33/06 ,  H01L33/02 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

公开(公告)号：US10229977B2

公开(公告)日：2019-03-12

申请号：US15708156

申请日：2017-09-19

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Hsueh Lu ,  Hsin-Chiao Fang ,  Chi-Hao Cheng ,  Chih-Feng Lu ,  Chi-Feng Huang

IPC: H01L29/205 ,  H01L33/04 ,  H01L33/32

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0≤x≤1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm−3 and carbon having a concentration greater than 5×1017 cm−3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0≤y≤1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

公开(公告)号：US09640716B2

公开(公告)日：2017-05-02

申请号：US14811821

申请日：2015-07-28

Applicant: Genesis Photonics Inc.

Inventor： Chi-Feng Huang ,  Hsin-Chiao Fang ,  Chi-Hao Cheng

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/002 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

公开(公告)号：US20170033260A1

公开(公告)日：2017-02-02

申请号：US14811821

申请日：2015-07-28

Applicant: Genesis Photonics Inc.

Inventor： Chi-Feng Huang ,  Hsin-Chiao Fang ,  Chi-Hao Cheng

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/002 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/32

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

Abstract translation: 多重量子阱结构包括沿着一个方向布置的多个阱势垒组。 每个阱区包括阻挡层，至少一个中间层和阱层。 阻挡层的带隙大于中间层的平均带隙，中间层的平均带隙大于阱层的带隙。 阻挡层的阻挡层，中间层和阱层被轮流堆叠。 沿着该方向的阱层的至少一部分的厚度沿着该方向逐渐减小，并且中间层的至少一部分的厚度在该方向上逐渐增大。 还提供了一种制造多量子阱结构的方法。