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公开(公告)号：US11342488B2
公开(公告)日：2022-05-24
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US10411065B2
公开(公告)日：2019-09-10
申请号：US16101681
申请日：2018-08-13
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Chih-Chung Kuo , Jing-En Huang , Shao-Ying Ting
Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
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公开(公告)号：US20180374998A1
公开(公告)日：2018-12-27
申请号：US16102691
申请日：2018-08-13
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yu-Feng Lin , Yi-Ru Huang
Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.
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公开(公告)号：US10008634B2
公开(公告)日：2018-06-26
申请号：US15726673
申请日：2017-10-06
Applicant: GENESIS PHOTONICS INC.
Inventor： Yi-Fan Li , Jing-En Huang , Sie-Jhan Wu
CPC classification number: H01L33/22 , H01L33/005 , H01L33/0095 , H01L33/06 , H01L33/486 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091
Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.
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公开(公告)号：US20180151545A1
公开(公告)日：2018-05-31
申请号：US15878592
申请日：2018-01-24
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L25/075
CPC classification number: H01L25/0753 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/16145 , H01L2224/4813 , H01L2224/48464 , H01L2224/73265
Abstract: A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. The substrate module includes a substrate, a first conductive layer, an insulation layer and a second conductive layer. The substrate has an upper surface. The insulation layer is formed on the upper surface of the substrate, separates the substrate and the first conductive layer and has an opening. The second conductive layer connects to the upper surface of the substrate and is separated from the first conductive layer. The light-emitting component is disposed on the substrate module and electrically connected to the first conductive layer and the second conductive layer.
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Patent Agency Ranking
公开(公告)号：US20180138369A1
公开(公告)日：2018-05-17
申请号：US15871891
申请日：2018-01-15
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/405 , H01L33/42
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号：US20180053742A1
公开(公告)日：2018-02-22
申请号：US15680225
申请日：2017-08-18
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
IPC: H01L23/00 , H01L21/683 , H01L21/78 , H01L25/075 , H01L33/62
CPC classification number: H01L24/97 , H01L21/6836 , H01L21/78 , H01L24/81 , H01L24/83 , H01L25/0753 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2221/68336 , H01L2221/6834 , H01L2221/68354 , H01L2221/68363 , H01L2224/81203 , H01L2224/81805 , H01L2224/81815 , H01L2224/83851 , H01L2224/95001 , H01L2224/95136 , H01L2933/0066 , H01L2924/00014
Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.
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公开(公告)号：US20170062653A1
公开(公告)日：2017-03-02
申请号：US15255161
申请日：2016-09-02
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Jing-En Huang , Yu-Chen Kuo , Yan-Ting Lan , Kai-Shun Kang , Fei-Lung Lu , Teng-Hsien Lai , Yi-Ru Huang
CPC classification number: H01L33/06 , H01L33/145 , H01L33/20 , H01L33/38 , H01L2933/0016
Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。
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9.发明授权公开(公告)号：US09431579B2
公开(公告)日：2016-08-30
申请号：US14576207
申请日：2014-12-19
Applicant: Genesis Photonics Inc.
Inventor： Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/382 , H01L33/486 , H01L33/505
Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。
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公开(公告)号：US20160247985A1
公开(公告)日：2016-08-25
申请号：US15045273
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Kai-Shun Kang , Yu-Chen Kuo , Fei-Lung Lu , Teng-Hsien Lai
CPC classification number: H01L33/0095 , B28D5/0011 , H01L33/20 , H01L33/22
Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.
Abstract translation: 发光器件包括半导体发光单元和透光衬底。 透光基板包括具有两个长边和两个短边和侧面的上表面，并且半导体发光单元设置在上表面上。 侧表面包括两个第一表面，两个第二表面和粗糙的微结构。 每个第一表面连接到上表面的一个长边，并且每个第二表面连接到上表面的一个短边。 粗糙微结构形成在第一表面和第二表面上，每个第一表面上的粗糙微结构的覆盖率大于或等于每个第一表面上粗糙微结构的覆盖率 第二表面。 还提供了一种发光器件的制造方法。
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