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    METHOD OF FORMING A LAYER OF GLUE ON A WORK PIECE
    2.
    发明申请
    METHOD OF FORMING A LAYER OF GLUE ON A WORK PIECE 审中-公开
    在工作层上形成一层玻璃的方法

    公开(公告)号：US20160067728A1

    公开(公告)日：2016-03-10

    申请号：US14944238

    申请日：2015-11-18

    Applicant: Genesis Photonics Inc.

    Inventor： Tai-Cheng Tsai ,  Gwo-Jiun Sheu ,  Chin-Hua Hung ,  Po-Jen Su

    IPC: B05B12/08 ,  B05D1/02

    CPC classification number: B05B12/084 ,  B05B12/008 ,  B05B12/12 ,  B05B15/555 ,  B05D1/02

    Abstract: A method of forming a layer of glue on a work piece includes: spraying the glue on the work piece; obtaining specification data of the glue by measuring a weight of the glue being sprayed on the work piece; and adjusting the spraying amount of the glue in real time according to the specification data of the glue.

    Abstract translation: 在工件上形成胶水层的方法包括：将胶水喷涂在工件上; 通过测量喷涂在工件上的胶水的重量来获得胶水的规格数据; 并根据胶水的规格数据实时调整胶水喷涂量。

    Light source device having light-emitting diode chips of varying thickness
    3.
    发明授权
    Light source device having light-emitting diode chips of varying thickness 有权

    公开(公告)号：US10224315B2

    公开(公告)日：2019-03-05

    申请号：US15688844

    申请日：2017-08-28

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Yen Chen ,  Yun-Li Li ,  Po-Jen Su

    IPC: H01L25/07 ,  H01L25/04 ,  H01L25/11 ,  H01L33/62 ,  H01L27/32 ,  H01L25/075 ,  H01L23/00 ,  H01L27/15 ,  H01L25/065

    Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

    LIGHT SOURCE DEVICE
    5.
    发明申请
    LIGHT SOURCE DEVICE 有权
    光源设备

    公开(公告)号：US20160043062A1

    公开(公告)日：2016-02-11

    申请号：US14886110

    申请日：2015-10-19

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Yen Chen ,  Yun-Li Li ,  Po-Jen Su

    IPC: H01L25/075 ,  H01L33/62

    CPC classification number: H01L25/0753 ,  H01L24/14 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.

    Abstract translation: 提供了包括基板，多个第一发光二极管（LED）芯片和至少一个第二LED芯片的光源装置。 基板具有上表面。 多个第一LED芯片设置在上表面上并电连接到基板。 每个第一LED芯片包括第一芯片基板，第一半导体层和多个第一电极，并且第一电极设置在基板的上表面上。 第二LED芯片设置在上表面上并电连接到基板。 第二LED芯片包括第二芯片基板，第二半导体层和多个第二电极。 第二芯片基板的厚度与第一芯片基板的厚度不同，第二电极设置在基板的上表面。

    Light emitting diode and flip-chip light emitting diode package
    6.
    发明授权
    Light emitting diode and flip-chip light emitting diode package 有权
    发光二极管和倒装芯片发光二极管封装

    公开(公告)号：US08680565B2

    公开(公告)日：2014-03-25

    申请号：US13707292

    申请日：2012-12-06

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo ,  Po-Jen Su

    IPC: H01L33/38 ,  H01L33/24

    CPC classification number: H01L33/36 ,  H01L33/38 ,  H01L33/382

    Abstract: A light emitting diode (LED) is revealed. The LED includes a substrate, a first-type-doped layer, a light emitting layer, a second-type-doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED features that the second groove is connected to one end of each first groove and penetrates the second-type-doped layer and the light emitting layer to expose a part of the first-type-doped layer. The contact area between the first contact and the first-type-doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

    Abstract translation: 揭示了发光二极管（LED）。 LED包括基板，第一掺杂层，发光层，第二类型掺杂层，多个第一凹槽，第二凹槽，绝缘层，第一触点和第二触点。 LED的特征在于，第二凹槽连接到每个第一凹槽的一端并且穿透第二类型掺杂层和发光层以暴露第一掺杂层的一部分。 第一接触和第一掺杂层之间的接触面积增加。 因此，LED在高电流密度下工作而不会积热。 此外，发光面积不降低，发光效率不受影响。 LED在封装衬底上翻转以形成倒装芯片LED封装。

    Light emitting device
    7.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US09574721B2

    公开(公告)日：2017-02-21

    申请号：US14715569

    申请日：2015-05-18

    Applicant: Genesis Photonics Inc.

    Inventor： Sheng-Yuan Sun ,  Po-Jen Su

    IPC: F21K99/00 ,  F21V9/16 ,  F21V13/02 ,  H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/50 ,  F21Y101/00

    CPC classification number: F21K9/64 ,  F21V9/30 ,  F21V13/02 ,  F21V19/0025 ,  F21Y2101/00 ,  F21Y2113/10 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/20 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region.

    Abstract translation: 提供了包括基板，多个第一发光二极管（LED）芯片和多个第二LED芯片的发光模块。 衬底具有十字形中心区域和围绕十字形中心区域的周边区域。 第一LED芯片设置在基板上并且至少位于十字形中心区域中。 第二LED芯片设置在基板上并且至少位于周边区域中。 每个第二LED芯片的尺寸小于每个第一LED芯片的尺寸。 位于周边区域的第一LED芯片的数量小于十字形中心区域中的数量。 位于十字形中心区域的第二LED芯片的数量小于周边区域中的第二LED芯片的数量。

    Light source module
    8.
    发明授权
    Light source module 有权
    光源模块

    公开(公告)号：US09165909B2

    公开(公告)日：2015-10-20

    申请号：US14248343

    申请日：2014-04-09

    Applicant: Genesis Photonics Inc.

    Inventor： Cheng-Yen Chen ,  Yun-Li Li ,  Po-Jen Su

    IPC: H01L27/15 ,  H01L25/075 ,  H01L33/62

    CPC classification number: H01L25/0753 ,  H01L24/14 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A light source module including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. A first distance is between a top surface of each of the first LED chips away from the upper surface of the substrate and the upper surface, a second distance is between a top surface of the second LED chip away from the upper surface of the substrate and the upper surface, and the second distance is greater than each of the first distances.

    Abstract translation: 提供了包括基板，多个第一发光二极管（LED）芯片和至少一个第二LED芯片的光源模块。 基板具有上表面。 多个第一LED芯片设置在上表面上并电连接到基板。 第二LED芯片设置在上表面上并电连接到基板。 第一距离在离开基板的上表面的每个第一LED芯片的顶表面和上表面之间，第二距离在距离基板的上表面的第二LED芯片的顶表面之间;第二距离在第二LED芯片的顶表面之间， 上表面和第二距离大于每个第一距离。

    Light emitting diode and flip-chip light emitting diode package
    9.
    发明授权
    Light emitting diode and flip-chip light emitting diode package 有权
    发光二极管和倒装芯片的发光二极管封装

    公开(公告)号：US08829549B2

    公开(公告)日：2014-09-09

    申请号：US13687120

    申请日：2012-11-28

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Chih-Ling Wu ,  Yu-Yun Lo ,  Po-Jen Su

    IPC: H01L33/00 ,  H01L33/60 ,  H01L33/20 ,  H01L33/44 ,  H01L33/64 ,  H01L33/38 ,  H01L33/62 ,  H01L33/40

    CPC classification number: H01L33/60 ,  H01L33/20 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/16

    Abstract: A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.

    Abstract translation: 提供了包括第一掺杂层，发光层，第二掺杂层和衬底的发光二极管。 多个第一凹槽穿过第二掺杂层和发光层。 因此，暴露第一掺杂层的部分表面。 多个第一凹槽中的至少一个延伸到第二涂料层和发光层的边缘。 绝缘层设置在第二掺杂层的一部分上并延伸到第一凹槽的侧壁。 第一接触件设置在第一凹槽中并电连接至第一掺杂层。 第二接触设置在第二掺杂层上并电连接到第二掺杂层。 通过第一凹槽，第一接触可以电连接到第一掺杂层以改善电流扩展。

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