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公开(公告)号：US10411065B2
公开(公告)日：2019-09-10
申请号：US16101681
申请日：2018-08-13
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Chih-Chung Kuo , Jing-En Huang , Shao-Ying Ting
Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
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公开(公告)号：US20180374998A1
公开(公告)日：2018-12-27
申请号：US16102691
申请日：2018-08-13
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yu-Feng Lin , Yi-Ru Huang
Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.
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公开(公告)号：US20180151545A1
公开(公告)日：2018-05-31
申请号：US15878592
申请日：2018-01-24
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L25/075
CPC classification number: H01L25/0753 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2224/16145 , H01L2224/4813 , H01L2224/48464 , H01L2224/73265
Abstract: A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. The substrate module includes a substrate, a first conductive layer, an insulation layer and a second conductive layer. The substrate has an upper surface. The insulation layer is formed on the upper surface of the substrate, separates the substrate and the first conductive layer and has an opening. The second conductive layer connects to the upper surface of the substrate and is separated from the first conductive layer. The light-emitting component is disposed on the substrate module and electrically connected to the first conductive layer and the second conductive layer.
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公开(公告)号：US20180138369A1
公开(公告)日：2018-05-17
申请号：US15871891
申请日：2018-01-15
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Yun Lo , Chih-Ling Wu , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/405 , H01L33/42
Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.
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公开(公告)号：US20180053742A1
公开(公告)日：2018-02-22
申请号：US15680225
申请日：2017-08-18
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Yan-Ting Lan , Jing-En Huang , Yi-Ru Huang
IPC: H01L23/00 , H01L21/683 , H01L21/78 , H01L25/075 , H01L33/62
CPC classification number: H01L24/97 , H01L21/6836 , H01L21/78 , H01L24/81 , H01L24/83 , H01L25/0753 , H01L33/0095 , H01L33/38 , H01L33/62 , H01L2221/68336 , H01L2221/6834 , H01L2221/68354 , H01L2221/68363 , H01L2224/81203 , H01L2224/81805 , H01L2224/81815 , H01L2224/83851 , H01L2224/95001 , H01L2224/95136 , H01L2933/0066 , H01L2924/00014
Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09431579B2
公开(公告)日：2016-08-30
申请号：US14576207
申请日：2014-12-19
Applicant: Genesis Photonics Inc.
Inventor： Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/382 , H01L33/486 , H01L33/505
Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。
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公开(公告)号：US20160247964A1
公开(公告)日：2016-08-25
申请号：US15045440
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Jing-En Huang
IPC: H01L33/00 , H01L33/32 , H01L33/06 , H01L21/683
CPC classification number: H01L33/0079 , H01L21/6835 , H01L21/6836 , H01L33/0075 , H01L33/0095 , H01L33/06 , H01L33/32 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68381
Abstract: A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting table and is processed such that a substrate of the LED wafer has a thickness smaller than or equal to 100 μm. A fixing piece is pasted on the LED wafer surface. The LED wafer is detached from the crafting table. The LED wafer together with the fixing piece are cut and broken, such that the LED wafer forms a plurality of LEDs. The fixing piece is removed. Before the LED wafer is detached from the crafting table, the fixing piece is pasted on the LED wafer to provide a supporting force to the LED wafer to maintain the flatness of the wafer and avoid the wafer being warped or the substrate being broken or damaged, such that product quality and reliability can be improved.
Abstract translation: 提供了一种发光二极管（LED）及其制造方法。 该方法包括以下步骤。 将LED晶片固定在工艺台上并进行处理，使得LED晶片的基板具有小于或等于100μm的厚度。 将固定件粘贴在LED晶片表面上。 LED晶片与工艺台分离。 LED晶片与固定片一起被切断和断开，使得LED晶片形成多个LED。 拆下固定件。 在将LED晶片与工艺台分离之前，将固定件粘贴在LED晶片上，以向LED晶片提供支撑力以保持晶片的平坦度，并避免晶片翘曲或基板被破坏或损坏， 从而可以提高产品质量和可靠性。
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公开(公告)号：US20160013358A1
公开(公告)日：2016-01-14
申请号：US14474283
申请日：2014-09-01
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
IPC: H01L33/00
CPC classification number: H01L33/0095 , H01L25/0753 , H01L27/15 , H01L33/005 , H01L33/08 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/507 , H01L33/52 , H01L33/62 , H01L33/64 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2224/24137 , H01L2924/0002 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H05B33/0803 , H05B33/0806 , H05B33/0827 , H01L2924/00
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
Abstract translation: 提供一种制造发光单元的方法。 提供包括彼此分离的多个发光骰子的半导体结构。 形成模塑料以封装发光管芯。 每个发光管芯包括发光元件，第一电极和第二电极。 在第一电极和发光管芯的第二电极上形成图案化的金属层。 提供了一种基板，其中模塑料位于基板和发光芯片的发光元件之间。 执行切割处理以切割半导体结构，图案化金属层，模制化合物和基板，以便限定具有串联连接环路，并联连接环路或串联 - 并联连接环路的发光单元。
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公开(公告)号：US20160005922A1
公开(公告)日：2016-01-07
申请号：US14536676
申请日：2014-11-09
Applicant: Genesis Photonics Inc.
Inventor： Kuan-Chieh Huang , Shao-Ying Ting , Tung-Lin Chuang , Jing-En Huang , Yi-Ru Huang
Abstract: A light emitting component includes a light emitting unit, a phosphor layer and a distributed Bragg reflector layer. The phosphor layer is disposed on the light emitting unit and the distributed Bragg reflector layer is disposed above the phosphor layer. The distributed Bragg reflector layer is formed by at least two materials with different refractive indices.
Abstract translation: 发光部件包括发光单元，荧光体层和分布布拉格反射器层。 荧光体层设置在发光单元上，分布式布拉格反射层设置在荧光体层的上方。 分布式布拉格反射层由具有不同折射率的至少两种材料形成。
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公开(公告)号：US10608144B2
公开(公告)日：2020-03-31
申请号：US15975743
申请日：2018-05-09
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
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