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    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20160343910A1

    公开(公告)日：2016-11-24

    申请号：US15135584

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075 ,  H01L33/08

    CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/20 ,  H01L2933/0016

    Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

    Abstract translation: 发光装置包括基板和第一发光单元。 第一发光单元设置在基板上，并且包括第一半导体层，第一发光层和第二半导体层。 第一半导体层设置在基板上。 第一发光层设置在第一半导体层和第二半导体层之间。 第二半导体层设置在第一发光层上。 第一半导体层具有第一侧壁和第二侧壁。 第一角度在衬底和第一侧壁之间。 第二角度在衬底和第二侧壁之间。 第一角度小于第二角度。

    Light-emitting device and method for manufacturing the same
    3.
    发明授权
    Light-emitting device and method for manufacturing the same 有权

    公开(公告)号：US10411065B2

    公开(公告)日：2019-09-10

    申请号：US16101681

    申请日：2018-08-13

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L33/20 ,  H01L27/15

    Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

    LIGHT EMITTING DIODE AND MANUFACTURE METHOD THEREOF
    4.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURE METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20170062653A1

    公开(公告)日：2017-03-02

    申请号：US15255161

    申请日：2016-09-02

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

    IPC: H01L33/06 ,  H01L33/14 ,  H01L33/38

    CPC classification number: H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L2933/0016

    Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

    Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。

    Light-emitting device and method for manufacturing the same
    5.
    发明授权
    Light-emitting device and method for manufacturing the same 有权

    公开(公告)号：US10784307B2

    公开(公告)日：2020-09-22

    申请号：US16564053

    申请日：2019-09-09

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L21/00 ,  H01L27/15 ,  H01L33/20

    Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200274027A1

    公开(公告)日：2020-08-27

    申请号：US16792312

    申请日：2020-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Yu-Chen Kuo ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Yao-Tang Li ,  Tung-Lin Chuang ,  Tsung-Syun Huang ,  Jing-En Huang

    IPC: H01L33/10 ,  H01L33/64 ,  H01L33/40

    Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.

    Red light emitting diode and manufacturing method thereof
    9.
    发明授权
    Red light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US11508877B2

    公开(公告)日：2022-11-22

    申请号：US16826298

    申请日：2020-03-23

    Applicant: Genesis Photonics Inc.

    Inventor： Tung-Lin Chuang ,  Yi-Ru Huang ,  Yu-Chen Kuo ,  Chih-Ming Shen ,  Tsung-Syun Huang ,  Jing-En Huang

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/10

    Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.

    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20200006419A1

    公开(公告)日：2020-01-02

    申请号：US16564053

    申请日：2019-09-09

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

    IPC: H01L27/15

    Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

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