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公开(公告)号：US11342488B2
公开(公告)日：2022-05-24
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US20160005922A1
公开(公告)日：2016-01-07
申请号：US14536676
申请日：2014-11-09
Applicant: Genesis Photonics Inc.
Inventor： Kuan-Chieh Huang , Shao-Ying Ting , Tung-Lin Chuang , Jing-En Huang , Yi-Ru Huang
Abstract: A light emitting component includes a light emitting unit, a phosphor layer and a distributed Bragg reflector layer. The phosphor layer is disposed on the light emitting unit and the distributed Bragg reflector layer is disposed above the phosphor layer. The distributed Bragg reflector layer is formed by at least two materials with different refractive indices.
Abstract translation: 发光部件包括发光单元，荧光体层和分布布拉格反射器层。 荧光体层设置在发光单元上，分布式布拉格反射层设置在荧光体层的上方。 分布式布拉格反射层由具有不同折射率的至少两种材料形成。
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公开(公告)号：US09184360B2
公开(公告)日：2015-11-10
申请号：US14715581
申请日：2015-05-18
Applicant: Genesis Photonics Inc.
Inventor： Cheng-Yen Chen , Yi-Fan Li , Han-Min Wu , Kuan-Chieh Huang , Tung-Lin Chuang , Sheng-Yuan Sun
CPC classification number: H01L33/642 , F21K9/64 , F21V29/74 , F21Y2115/10 , H01L33/486 , H01L33/505 , H01L33/60 , H01L33/641
Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.
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公开(公告)号：US20210391519A1
公开(公告)日：2021-12-16
申请号：US17344872
申请日：2021-06-10
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chi-Hao Cheng
Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer. A manufacturing method of the light emitting device is also provided.
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公开(公告)号：US20200220050A1
公开(公告)日：2020-07-09
申请号：US16705255
申请日：2019-12-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kai-Shun Kang , Tung-Lin Chuang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.
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Patent Agency Ranking
公开(公告)号：US10608144B2
公开(公告)日：2020-03-31
申请号：US15975743
申请日：2018-05-09
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
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公开(公告)号：US20180261729A1
公开(公告)日：2018-09-13
申请号：US15975743
申请日：2018-05-09
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.
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公开(公告)号：US20180261727A1
公开(公告)日：2018-09-13
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20160240732A1
公开(公告)日：2016-08-18
申请号：US15045264
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Chih-Ming Shen , Sheng-Tsung Hsu , Kuan-Chieh Huang , Jing-En Huang
IPC: H01L33/10
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.
Abstract translation: 发光部件包括外延结构，粘合层，第一反射层，第二反射层，阻挡层，第一电极和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 粘合剂层设置在外延结构的第二半导体层上。 第一反射层设置在粘合剂层上。 第二反射层设置在第一反射层上并延伸到粘合剂层上。 第二反射层的投影面积大于第一反射层的投影面积。 阻挡层设置在第二反射层上。 第一电极电连接到第一半导体层。 第二电极电连接到第二半导体层。
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公开(公告)号：US11508877B2
公开(公告)日：2022-11-22
申请号：US16826298
申请日：2020-03-23
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Chih-Ming Shen , Tsung-Syun Huang , Jing-En Huang
Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.
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