公开(公告)号：US11342488B2

公开(公告)日：2022-05-24

申请号：US16531148

申请日：2019-08-05

Applicant: Genesis Photonics Inc.

Inventor： Tung-Lin Chuang ,  Yi-Ru Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Chih-Ming Shen ,  Jing-En Huang

IPC: H01L27/15 ,  H01L33/60 ,  H01L33/36 ,  H01L25/075 ,  H01L33/14 ,  H01L33/62

Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.

公开(公告)号：US20180374998A1

公开(公告)日：2018-12-27

申请号：US16102691

申请日：2018-08-13

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yu-Feng Lin ,  Yi-Ru Huang

IPC: H01L33/48 ,  H01L33/62 ,  H01L33/46 ,  H01L33/52 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/54

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.

公开(公告)号：US20180151545A1

公开(公告)日：2018-05-31

申请号：US15878592

申请日：2018-01-24

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang

IPC: H01L25/075

CPC classification number: H01L25/0753 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/16145 ,  H01L2224/4813 ,  H01L2224/48464 ,  H01L2224/73265

Abstract: A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. The substrate module includes a substrate, a first conductive layer, an insulation layer and a second conductive layer. The substrate has an upper surface. The insulation layer is formed on the upper surface of the substrate, separates the substrate and the first conductive layer and has an opening. The second conductive layer connects to the upper surface of the substrate and is separated from the first conductive layer. The light-emitting component is disposed on the substrate module and electrically connected to the first conductive layer and the second conductive layer.

公开(公告)号：US20180138369A1

公开(公告)日：2018-05-17

申请号：US15871891

申请日：2018-01-15

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/40 ,  H01L33/42

CPC classification number: H01L33/405 ,  H01L33/42

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

公开(公告)号：US20180053742A1

公开(公告)日：2018-02-22

申请号：US15680225

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/78 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L24/97 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/62 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2224/81203 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95136 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

公开(公告)号：US20170084791A1

公开(公告)日：2017-03-23

申请号：US15365918

申请日：2016-11-30

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

公开(公告)号：US20170062653A1

公开(公告)日：2017-03-02

申请号：US15255161

申请日：2016-09-02

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L2933/0016

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。

公开(公告)号：US09431579B2

公开(公告)日：2016-08-30

申请号：US14576207

申请日：2014-12-19

Applicant: Genesis Photonics Inc.

Inventor： Chih-Ling Wu ,  Yi-Ru Huang ,  Yu-Yun Lo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/02 ,  H01L33/38 ,  H01L33/48 ,  H01L33/50

CPC classification number: H01L33/382 ,  H01L33/486 ,  H01L33/505

Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.

Abstract translation: 半导体发光结构包括外延结构，N型电极焊盘，P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上，其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间，其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。

公开(公告)号：US20160013358A1

公开(公告)日：2016-01-14

申请号：US14474283

申请日：2014-09-01

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/005 ,  H01L33/08 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/507 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/24137 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H05B33/0803 ,  H05B33/0806 ,  H05B33/0827 ,  H01L2924/00

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

Abstract translation: 提供一种制造发光单元的方法。 提供包括彼此分离的多个发光骰子的半导体结构。 形成模塑料以封装发光管芯。 每个发光管芯包括发光元件，第一电极和第二电极。 在第一电极和发光管芯的第二电极上形成图案化的金属层。 提供了一种基板，其中模塑料位于基板和发光芯片的发光元件之间。 执行切割处理以切割半导体结构，图案化金属层，模制化合物和基板，以便限定具有串联连接环路，并联连接环路或串联 - 并联连接环路的发光单元。

公开(公告)号：US20160005922A1

公开(公告)日：2016-01-07

申请号：US14536676

申请日：2014-11-09

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Tung-Lin Chuang ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/10 ,  H01L33/50

CPC classification number: H01L33/50 ,  H01L33/46

Abstract: A light emitting component includes a light emitting unit, a phosphor layer and a distributed Bragg reflector layer. The phosphor layer is disposed on the light emitting unit and the distributed Bragg reflector layer is disposed above the phosphor layer. The distributed Bragg reflector layer is formed by at least two materials with different refractive indices.

Abstract translation: 发光部件包括发光单元，荧光体层和分布布拉格反射器层。 荧光体层设置在发光单元上，分布式布拉格反射层设置在荧光体层的上方。 分布式布拉格反射层由具有不同折射率的至少两种材料形成。