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公开(公告)号：US20200220050A1
公开(公告)日：2020-07-09
申请号：US16705255
申请日：2019-12-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kai-Shun Kang , Tung-Lin Chuang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.
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公开(公告)号：US20200274027A1
公开(公告)日：2020-08-27
申请号：US16792312
申请日：2020-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Yu-Chen Kuo , Sheng-Tsung Hsu , Chih-Ming Shen , Yao-Tang Li , Tung-Lin Chuang , Tsung-Syun Huang , Jing-En Huang
Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.
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公开(公告)号：US10050173B2
公开(公告)日：2018-08-14
申请号：US15045273
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Jing-En Huang , Kai-Shun Kang , Yu-Chen Kuo , Fei-Lung Lu , Teng-Hsien Lai
Abstract: A light emitting device includes a semiconductor light emitting unit and a light-transmitting substrate. The light-transmitting substrate includes an upper surface having two long sides and two short sides and a side surface, and the semiconductor light emitting unit is disposed on the upper surface. The side surface includes two first surfaces, two second surfaces, and rough micro-structures. Each of the first surfaces is connected to one of the long sides of the upper surface, and each of the second surfaces is connected to one of the short sides of the upper surface. The rough micro-structures are formed on the first surfaces and the second surfaces, a covering rate of the rough micro-structures on each of the first surfaces is greater than or equal to a covering rate of the rough micro-structures on each of the second surfaces. A manufacturing method of the light emitting device is also provided.
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公开(公告)号：US20160315238A1
公开(公告)日：2016-10-27
申请号：US15135574
申请日：2016-04-22
Applicant: Genesis Photonics Inc.
Inventor： Yu-Chen Kuo , Teng-Hsien Lai , Kai-Shun Kang , Yan-Ting Lan , Jing-En Huang , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/145
Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.
Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一类掺杂半导体层，第二类掺杂半导体层和它们之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层位于第二类掺杂半导体层上。 电流阻挡层在电流扩散层和第二类掺杂半导体层之间。 第二电极在电流扩展层上并电连接到第二类掺杂半导体层。 电流阻挡层具有面向半导体器件层的第一表面，反向到半导体器件层的第二表面和第一倾斜表面。 第一倾斜表面连接在第一表面和第二表面之间并相对于第一表面和第二表面倾斜。
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公开(公告)号：US11508877B2
公开(公告)日：2022-11-22
申请号：US16826298
申请日：2020-03-23
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Chih-Ming Shen , Tsung-Syun Huang , Jing-En Huang
Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.
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Patent Agency Ranking
公开(公告)号：US20190312176A1
公开(公告)日：2019-10-10
申请号：US16443832
申请日：2019-06-17
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Jing-En Huang , Yu-Chen Kuo , Yan-Ting Lan , Kai-Shun Kang , Fei-Lung Lu , Teng-Hsien Lai , Yi-Ru Huang
Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
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公开(公告)号：US20160247972A1
公开(公告)日：2016-08-25
申请号：US15045263
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yu-Chen Kuo , Teng-Hsien Lai , Kai-Shun Kang , Yan-Ting Lan , Jing-En Huang
CPC classification number: H01L33/38 , H01L33/145 , H01L33/20 , H01L2933/0016
Abstract: A light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion.
Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一掺杂半导体层，第二掺杂半导体层和位于第一和第二掺杂半导体层之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层设置在第二掺杂半导体层上，电流阻挡层包括主体和从主体延伸的延伸部分。 电流扩展层覆盖电流阻挡层。 第二电极经由电流扩展层与第二掺杂半导体层电连接，其中第二电极包括接合焊盘和从焊盘延伸的指状部分，焊盘位于主体上方， 手指部分位于延伸部分的上方，并且手指部分的部分区域不与延伸部分重叠。
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公开(公告)号：US20160240741A1
公开(公告)日：2016-08-18
申请号：US15045265
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yu-Chen Kuo , Yan-Ting Lan , Jing-En Huang , Teng-Hsien Lai , Kai-Shun Kang
IPC: H01L33/38
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light emitting component includes an epitaxial structure, a first electrode, a conducting layer and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The first electrode is disposed on the first semiconductor layer. The conducting layer is disposed on the second semiconductor layer and includes a first conducting area and a second conducting area, wherein a resistance of the first conducting area is smaller than a resistance of the second conducting area. The second electrode is disposed on the conducting layer and has an extension portion, wherein the extension portion extends toward the first electrode and the first conducting area overlaps at least a part of the extension portion.
Abstract translation: 发光部件包括外延结构，第一电极，导电层和第二电极。 外延结构包括衬底，第一半导体层，发光层和第二半导体层。 第一电极设置在第一半导体层上。 导电层设置在第二半导体层上，并且包括第一导电区域和第二导电区域，其中第一导电区域的电阻小于第二导电区域的电阻。 第二电极设置在导电层上并具有延伸部分，其中延伸部分朝向第一电极延伸，第一导电区域与延伸部分的至少一部分重叠。
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公开(公告)号：US11342488B2
公开(公告)日：2022-05-24
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US20170062653A1
公开(公告)日：2017-03-02
申请号：US15255161
申请日：2016-09-02
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Jing-En Huang , Yu-Chen Kuo , Yan-Ting Lan , Kai-Shun Kang , Fei-Lung Lu , Teng-Hsien Lai , Yi-Ru Huang
CPC classification number: H01L33/06 , H01L33/145 , H01L33/20 , H01L33/38 , H01L2933/0016
Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.
Abstract translation: 提供了包括半导体外延层，第一电极和第二电极的发光二极管。 半导体外延层包括第一掺杂半导体层，第二掺杂半导体层和量子阱层。 在半导体外延层中形成凹部。 凹陷部分分离第二掺杂半导体层，量子阱层和第一掺杂半导体层的一部分，并在半导体外延层上限定第一区域和第二区域。 第一电极位于第一区域中，并且电连接至第一掺杂半导体层的至少一部分和第二掺杂半导体层的至少一部分。 第二电极位于第二区域中并电连接到第二掺杂半导体层。
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