Chamber device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

    公开(公告)号:US11483917B2

    公开(公告)日:2022-10-25

    申请号:US17156376

    申请日:2021-01-22

    Abstract: A chamber device may include a concentrating mirror, a central gas supply port, an inner wall, an exhaust port, a recessed portion, and a lateral gas supply port. The recessed portion may be on a side lateral to the focal line and recessed outward from the inner wall when viewed from a direction perpendicular to the focal line. The lateral gas supply port is formed at the recessed portion and may supply gas toward gas supplied from the central gas supply port so that a flow direction of the gas supplied from the central gas supply port is bent from a direction along the focal line toward the exhaust port and an internal space of the recessed portion.

    Extreme ultraviolet light generation apparatus and electronic device manufacturing method

    公开(公告)号:US11036143B2

    公开(公告)日:2021-06-15

    申请号:US16849421

    申请日:2020-04-15

    Inventor: Atsushi Ueda

    Abstract: An extreme ultraviolet light generation apparatus that generates extreme ultraviolet light by irradiating a target with a pulse laser beam includes: a chamber; a magnet that is positioned outside the chamber and forms a magnetic field (70) inside the chamber; a discharge path (37a) that is opened at a position on an inner wall surface of the chamber where the inner wall surface intersects a central axis of the magnetic field (70) and through which gas inside the chamber is discharged; and a gas supply unit (10a) configured to supply gas into the discharge path (37a) through an inner wall surface of the discharge path.

    Extreme ultraviolet light generation apparatus and electronic device manufacturing method

    公开(公告)号:US11272608B2

    公开(公告)日:2022-03-08

    申请号:US17226515

    申请日:2021-04-09

    Abstract: An extreme ultraviolet light generation apparatus may include a chamber causing a target substance to be turned into plasma with laser light, a light concentrating mirror concentrating extreme ultraviolet light generated by the turning of the target substance into plasma, a gas supply unit supplying gas into the chamber, a magnetic field generation unit generating a magnetic field including a magnetic field axis that crosses a light path of the extreme ultraviolet light, a first exhaust port arranged at a position through which the magnetic field axis passes in the chamber, a second exhaust port arranged at a position opposite to the light concentrating mirror in the chamber, and a gas exhaust amount adjustment unit adjusting a ratio between an exhaust amount of first exhaust gas exhausted from the first exhaust port and an exhaust amount of second exhaust gas exhausted from the second exhaust port.

    Extreme ultraviolet light generation apparatus

    公开(公告)号:US10582602B2

    公开(公告)日:2020-03-03

    申请号:US16536055

    申请日:2019-08-08

    Abstract: An extreme ultraviolet light generation apparatus includes: a chamber; an EUV light focusing mirror located in the chamber; and a hydrogen gas release unit that is located in the chamber and includes an opening configured to release a hydrogen gas inward from around the EUV light focusing mirror and a first cooling medium channel through which a cooling medium passes.

    Extreme ultraviolet light generation apparatus and method of designing the same

    公开(公告)号:US10001706B2

    公开(公告)日:2018-06-19

    申请号:US15651259

    申请日:2017-07-17

    CPC classification number: G03F7/2008 H05G2/006 H05G2/008

    Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a target supply device configured to successively supply targets into the chamber, and an extreme ultraviolet light collector mirror including a reflective surface having a through-hole at the center thereof. The reflective surface may reflect and collect extreme ultraviolet light generated at a predetermined emission cycle because of irradiation of the successively supplied targets with a laser beam. A gas ejection device may be disposed in the through-hole to jut out from the reflective surface and have a gas ejection opening to eject etching gas for debris onto the reflective surface. The gas ejection device may be configured so that the etching gas takes a longer time than the predetermined emission cycle to reach the through-hole-side end of effective reflective area of the reflective surface after being ejected from the gas ejection opening.

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