Laser system and electronic device manufacturing method

    公开(公告)号:US12160085B2

    公开(公告)日:2024-12-03

    申请号:US17220993

    申请日:2021-04-02

    Abstract: A laser system according to one aspect of the present disclosure includes a wavelength-variable first solid-state laser device configured to output a first pulse laser beam; a wavelength conversion system including a first nonlinear crystal configured to wavelength-convert the first pulse laser beam and a first rotation stage configured to change a first incident angle of the first pulse laser beam on the first nonlinear crystal; an excimer amplifier configured to amplify a pulse laser beam wavelength-converted by the wavelength conversion system; and a control unit configured to receive, from an external device, data of a target center wavelength of an excimer laser beam output from the excimer amplifier, control a wavelength of the first pulse laser beam in accordance with the instructed target center wavelength, and control the first incident angle on the first nonlinear crystal in accordance with an average value of the target center wavelength.

    Laser system and electronic device manufacturing method

    公开(公告)号:US11804697B2

    公开(公告)日:2023-10-31

    申请号:US17192205

    申请日:2021-03-04

    CPC classification number: H01S5/4012 H01S5/06821 H01S5/06837 H01S5/50

    Abstract: A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes a plurality of first semiconductor lasers configured to perform continuous wave oscillation in a single longitudinal mode with different wavelengths, a first spectrum monitor, and a first beam combiner. The control unit controls an oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first semiconductor lasers to obtain an excimer laser beam having at least a target center wavelength or a target spectral line width instructed by an external device.

    Laser system and electronic device manufacturing method

    公开(公告)号:US11870209B2

    公开(公告)日:2024-01-09

    申请号:US17517982

    申请日:2021-11-03

    CPC classification number: H01S3/2325 H01S3/225

    Abstract: A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is lower than 1.

    Laser system and electronic device manufacturing method

    公开(公告)号:US11784453B2

    公开(公告)日:2023-10-10

    申请号:US17517982

    申请日:2021-11-03

    CPC classification number: H01S3/2325 H01S3/225

    Abstract: A laser system includes a beam shaping unit, a random phase plate, and a collimating optical system in an optical path between a solid-state laser device and an excimer amplifier. When a traveling direction of a laser beam entering the excimer amplifier is a Z direction, a discharge direction of a pair of discharge electrodes is a V direction, a direction orthogonal to the V and Z directions is an H direction, a shaping direction of the beam shaping unit corresponding to the V direction is a first direction, a shaping direction of the beam shaping unit corresponding to the H direction is a second direction, an expansion rate in the first direction is E1, and an expansion rate in the second direction is E2, the beam shaping unit expands a beam section of the laser beam such that an expansion ratio defined by E2/E1 is higher than 1.

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