公开(公告)号：US09771665B2

公开(公告)日：2017-09-26

申请号：US15022532

申请日：2014-09-08

Applicant: Griffith University

Inventor： Francesca Iacopi ,  Mohsin Ahmed ,  Benjamin Vaughan Cunning

IPC: H01L21/00 ,  C30B1/02 ,  C30B1/10 ,  C30B29/02 ,  C01B31/04 ,  B81C1/00 ,  H01L21/02

CPC classification number: C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

Abstract: A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.