公开(公告)号：US20130164904A1

公开(公告)日：2013-06-27

申请号：US13764808

申请日：2013-02-12

Applicant: HARRIS CORPORATION

Inventor： David M. Smith ,  Jeffrey A. Schlang

IPC: H01L49/02

CPC classification number: H01F17/0013 ,  H01F2017/0053 ,  H01F2017/0086 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.

Abstract translation: IC器件（100）包括在基底层上具有基底层（108）和第一和第二上层（114,116）的IC体（106）。 IC体包括延伸穿过所述基底和第一上层以及所述第二上层的至少一部分的腔区（104）。 在IC器件中，空腔区域中的所述第二上层的一部分包括具有第一和第二接触端（140,142）的平面感应元件（102）。 在所述IC器件中，至少一个支撑部件（128,130,132）至少部分地在平行于所述基底层的至少第一方向上从所述IC体延伸到所述腔体区域中，并与所述平面感应 元件。

公开(公告)号：US10056670B2

公开(公告)日：2018-08-21

申请号：US14857943

申请日：2015-09-18

Applicant: HARRIS CORPORATION

Inventor： Michael Raymond Weatherspoon ,  Louis Joseph Rendek, Jr. ,  Lawrence Wayne Shacklette ,  Robert Patrick Maloney ,  David M. Smith

IPC: H01P3/12 ,  H05K3/46 ,  H01L23/498 ,  H01L21/48 ,  H01L23/66

CPC classification number: H01P3/121 ,  H01L21/4846 ,  H01L23/498 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H05K3/4614 ,  H05K3/4697 ,  H05K2201/0141 ,  H05K2203/016 ,  H05K2203/308 ,  H01L2924/00

Abstract: A method has been described for making an electrical structure having an air dielectric and includes forming a first subunit including a sacrificial substrate, an electrically conductive layer including a first metal on the sacrificial substrate, and a sacrificial dielectric layer on the sacrificial substrate and the electrically conductive layer. The method further includes forming a second subunit including a dielectric layer and an electrically conductive layer thereon including the first metal, and coating a second metal onto the first metal of one or more of the first and second subunits. The method also includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate and sacrificial dielectric layer to thereby form the electrical structure having the air dielectric.

公开(公告)号：US08722443B2

公开(公告)日：2014-05-13

申请号：US13764808

申请日：2013-02-12

Applicant: Harris Corporation

Inventor： David M. Smith ,  Jeffrey A. Schlang

IPC: H01L21/00

CPC classification number: H01F17/0013 ,  H01F2017/0053 ,  H01F2017/0086 ,  H01L23/645 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An IC device (100) includes an IC body (106) having a base layer (108) and first and second upper layers (114, 116) on the base layer. The IC body includes a cavity region (104) extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element (102) having first and second contacting ends (140, 142). In the IC device, at least one support member (128, 130, 132) extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.

Abstract translation: IC器件（100）包括在基底层上具有基底层（108）和第一和第二上层（114,116）的IC体（106）。 IC体包括延伸穿过所述基底和第一上层以及所述第二上层的至少一部分的腔区（104）。 在IC器件中，空腔区域中的所述第二上层的一部分包括具有第一和第二接触端（140,142）的平面感应元件（102）。 在所述IC器件中，至少一个支撑部件（128,130,132）至少部分地在平行于所述基底层的至少第一方向上从所述IC体延伸到所述腔体区域中，并与所述平面感应 元件。

公开(公告)号：US09159485B2

公开(公告)日：2015-10-13

申请号：US13972286

申请日：2013-08-21

Applicant: HARRIS CORPORATION

Inventor： Michael Raymond Weatherspoon ,  Louis Joseph Rendek, Jr. ,  Lawrence Wayne Shacklette ,  Robert Patrick Maloney ,  David M. Smith

IPC: H01F5/00 ,  H01F27/28 ,  H01F17/00 ,  H01F41/04 ,  H05K1/16 ,  H05K3/20 ,  H05K3/14 ,  H05K3/16

CPC classification number: H01F27/2804 ,  H01F5/00 ,  H01F17/0006 ,  H01F41/041 ,  H01F2017/0046 ,  H01F2017/0073 ,  H05K1/165 ,  H05K3/146 ,  H05K3/16 ,  H05K3/20 ,  H05K2201/0141 ,  H05K2201/0305 ,  H05K2201/1003 ,  H05K2203/016 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49073 ,  Y10T29/49075

Abstract: A method is for making an electrical inductor. The method includes forming a first subunit having a sacrificial substrate, and an electrically conductive layer defining the electrical inductor and including a first metal on the sacrificial substrate. The method includes forming a second subunit having a dielectric layer and an electrically conductive layer thereon defining electrical inductor terminals and having the first metal, and coating a second metal onto the first metal of one of the first and second subunits. The method includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate.

Abstract translation: 一种制造电感器的方法。 该方法包括形成具有牺牲衬底的第一子单元和限定电感器并且在牺牲衬底上包括第一金属的导电层。 该方法包括形成具有电介质层和导电层的第二子单元，其上限定电感器端子并具有第一金属，并且将第二金属涂覆到第一和第二子单元之一的第一金属上。 该方法包括将第一和第二子单元对齐在一起，加热和压缩对准的第一和第二子单元以形成将相邻金属部分粘合在一起的第一和第二金属的金属间化合物，以及去除牺牲基板。