公开(公告)号：US11437323B2

公开(公告)日：2022-09-06

申请号：US16892263

申请日：2020-06-03

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Victor Sorin ,  Michael Renne Ty Tan

IPC: H01L27/146 ,  H01L23/538 ,  H01L27/144 ,  H01L23/64 ,  H04B10/69 ,  H04J14/02 ,  H04B10/40

Abstract: A silicon interposer may include an on-chip DC blocking capacitor, comprising: a first electrical connection to couple to a supply voltage and to cathodes of a plurality of photodiodes formed in a two-dimensional photodiode array on a first substrate, and a second electrical connection to couple to ground and to ground inputs of a plurality of transimpedance amplifiers on a second substrate; wherein the on-chip DC blocking capacitor is configured to be shared among a plurality of receiver circuits comprising the plurality of photodiodes and the plurality of transimpedance amplifiers; and wherein the silicon interposer comprises a substrate separate from the first substrate and the second substrate.

公开(公告)号：US11588298B2

公开(公告)日：2023-02-21

申请号：US16909991

申请日：2020-06-23

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Michael Renne Ty Tan ,  Binhao Wang ,  Wayne Victor Sorin ,  Chao-Kun Lin

IPC: H01S5/14 ,  H01S5/183 ,  H01S5/10 ,  H01S5/0687

Abstract: Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

公开(公告)号：US10795098B2

公开(公告)日：2020-10-06

申请号：US16229967

申请日：2018-12-21

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne V. Sorin ,  Michael R. Tan ,  Stanley Cheung

IPC: G02B6/293 ,  H04B10/40 ,  G02B6/42 ,  H04J14/04 ,  H01S5/14

Abstract: A VCSEL transmitter includes a first VCSEL terminal disposed on a substrate and a second VCSEL terminal adjacent thereto. The transmitter also includes a first diffraction element within a first optical path of the first VCSEL terminal which receives and changes a first direction of a first light transmission having a low-order Laguerre Gaussian mode emitted from the first VCSEL terminal. The transmitter further includes a second diffraction element within a second optical path of the second VCSEL terminal which receives the second light transmission and converts the received light into a high-order Laguerre Gaussian mode. The transmitter also includes a mode combiner to direct the first light transmission into a lens which directs the light into a multi-mode optical fiber.

公开(公告)号：US20200244040A1

公开(公告)日：2020-07-30

申请号：US16258616

申请日：2019-01-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Renne Ty Tan ,  Sagi Varghese Mathai ,  Stanley Cheung

IPC: H01S5/183 ,  H01S5/42

Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

公开(公告)号：US10084285B1

公开(公告)日：2018-09-25

申请号：US15688448

申请日：2017-08-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Tan ,  Sagi Mathai ,  Stanley Cheung

IPC: G11B7/00 ,  H01S5/183 ,  G02B6/42 ,  H01S5/42

CPC classification number: H01S5/18319 ,  G02B6/2713 ,  G02B6/2773 ,  G02B6/4213 ,  G02B6/4246 ,  G02B6/4249 ,  G02B6/425 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/18341 ,  H01S5/18355 ,  H01S5/18361 ,  H01S5/18386 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/423 ,  H01S2301/163

Abstract: An example system may include a first vertical cavity surface emitting laser (VCSEL) that includes a first integrated polarization locking structure to produce a polarized optical data signal. The system may also comprise a second VCSEL that includes a second integrated polarization locking structure, the second integrated polarization locking structure orthogonal to the first integrated polarization locking structure, to produce an orthogonally polarized optical data signal. Lenses may be disposed on the substrate opposite the first VCSEL, to collimate the polarized optical data signal, and opposite the second VCSEL to collimate the orthogonally polarized optical data signal. A polarization division multiplexer may combine the first collimated polarized optical data signal and the second collimated orthogonally polarized optical data signal.

公开(公告)号：US10985531B2

公开(公告)日：2021-04-20

申请号：US16258616

申请日：2019-01-27

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Sorin ,  Michael Renne Ty Tan ,  Sagi Varghese Mathai ,  Stanley Cheung

IPC: H01S5/183 ,  H01S5/42

Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

公开(公告)号：US10177872B1

公开(公告)日：2019-01-08

申请号：US15714266

申请日：2017-09-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Binhao Wang ,  Wayne Victor Sorin ,  Michael Renne Ty Tan ,  Sagi Mathai ,  Stanley Cheung

IPC: G11B7/1356 ,  G11B7/127 ,  H04J14/06 ,  H04B10/50 ,  H04B10/69 ,  G02B27/30 ,  G02B6/42 ,  H01S5/022 ,  H04B7/0456 ,  H01S5/42 ,  H01S5/183

Abstract: An example system may include a first vertical cavity surface emitting laser (VCSEL) that includes a first integrated polarization locking structure to produce a polarized optical data signal. The system may also comprise a second VCSEL that includes a second integrated polarization locking structure, the second integrated polarization locking structure orthogonal to the first integrated polarization locking structure, to produce an orthogonally polarized optical data signal. Lenses may be disposed on the substrate opposite the first VCSEL, to collimate the polarized optical data signal, and opposite the second VCSEL to collimate the orthogonally polarized optical data signal. A polarization division multiplexer may combine the first collimated polarized optical data signal and the second collimated orthogonally polarized optical data signal.