Iterative programming of analog content addressable memory

    公开(公告)号:US11783907B2

    公开(公告)日:2023-10-10

    申请号:US17514847

    申请日:2021-10-29

    CPC classification number: G11C27/005 G11C15/046

    Abstract: Embodiments of the disclosure provide a system, method, or computer readable medium for programming a target analog voltage range of an analog content addressable memory (aCAM) row. The method may comprise calculating a threshold current sufficient to switch a sense amplifier (SA) on and discharge a match line (ML) connected to a cell of the aCAM; and based on calculating the threshold current, programming a match threshold value by setting a memristor conductance in association with the target analog voltage range applied to a data line (DL) input. The target analog voltage range may comprise a target analog voltage range vector.

    Analog content addressable memory with analog input and analog output

    公开(公告)号:US11735281B2

    公开(公告)日:2023-08-22

    申请号:US17245540

    申请日:2021-04-30

    CPC classification number: G11C27/005 G11C15/046

    Abstract: An analog content addressable memory (aCAM) that enables parallel searching of analog ranges of values and generates analog outputs that quantify matches between input data and stored data is disclosed. The input data can be compared with the stored data, and the input data can be determined to match the stored data based on a value associated with the input data being within a range associated with the stored data. The aCAM can generate an analog output that represents a number of matches and a number of mismatches between the input data and the stored data. Based on the analog output, whether the input data matches the stored data and a degree to which the input data matches the stored data can be determined.

    Hardware accelerator with analog-content addressable memory (a-CAM) for decision tree computation

    公开(公告)号:US11615827B2

    公开(公告)日:2023-03-28

    申请号:US17071924

    申请日:2020-10-15

    Abstract: Examples described herein relate to a decision tree computation system in which a hardware accelerator for a decision tree is implemented in the form of an analog Content Addressable Memory (a-CAM) array. The hardware accelerator accesses a decision tree. The decision tree comprises of multiple paths and each path of the multiple paths includes a set of nodes. Each node of the decision tree is associated with a feature variable of multiple feature variables of the decision tree. The hardware accelerator combines multiple nodes among the set of nodes with a same feature variable into a combined single node. Wildcard values are replaced for feature variables not being evaluated in each path. Each combined single node associated with each feature variable is mapped to a corresponding column in the a-CAM array and the multiple paths of the decision tree to rows of the a-CAM array.

    SELF-HEALING DOT-PRODUCT ENGINE
    7.
    发明申请

    公开(公告)号:US20210225440A1

    公开(公告)日:2021-07-22

    申请号:US17223435

    申请日:2021-04-06

    Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

    Self-healing dot-product engine
    8.
    发明授权

    公开(公告)号:US10984860B2

    公开(公告)日:2021-04-20

    申请号:US16364717

    申请日:2019-03-26

    Abstract: A DPE memristor crossbar array system includes a plurality of partitioned memristor crossbar arrays. Each of the plurality of partitioned memristor crossbar arrays includes a primary memristor crossbar array and a redundant memristor crossbar array. The redundant memristor crossbar array includes values that are mathematically related to values within the primary memristor crossbar array. In addition, the plurality of partitioned memristor crossbar arrays includes a block of shared analog circuits coupled to the plurality of partitioned memristor crossbar arrays. The block of shared analog circuits is to determine a dot product value of voltage values generated by at least one partitioned memristor crossbar array of the plurality of partitioned memristor crossbar arrays.

    Tunable and dynamically adjustable error correction for memristor crossbars

    公开(公告)号:US10452472B1

    公开(公告)日:2019-10-22

    申请号:US15997030

    申请日:2018-06-04

    Abstract: A dot-product engine (DPE) implemented on an integrated circuit as a crossbar array (CA) includes memory elements comprising a memristor and a transistor in series. A crossbar with N rows, M columns may have N×M memory elements. A vector input for N voltage inputs to the CA and a vector output for M voltage outputs from the CA. An analog-to-digital converter (ADC) and/or a digital-to-analog converter (DAC) may be coupled to each input/output register. Values representing a first matrix may be stored in the CA. Voltages/currents representing a second matrix may be applied to the crossbar. Ohm's Law and Kirchoff's Law may be used to determine values representing the dot-product as read from the crossbar. A portion of the crossbar may perform Error-correcting Codes (ECC) concurrently with calculating the dot-product results. ECC codes may be used to only indicate detection of errors, or for both detection and correction of results.

    Inequality check with ternary cam
    10.
    发明授权

    公开(公告)号:US12272401B2

    公开(公告)日:2025-04-08

    申请号:US18308990

    申请日:2023-04-28

    Abstract: Systems and methods are provided for implementing a low power and area ternary content addressable memory (TCAM). An example of a TCAM comprises a match line, and a plurality of TCAM cells connected along the match line. Each TCAM cell stores a state of a threshold value. The TCAM cells are configured to pull down a signal over the match line in response to inequality between an input search and the threshold value. The plurality of TCAM cells comprises a number of TCAM cells that is less than the threshold value. The input values can be encoded according to a first encoding scheme and the threshold value can be encoded according to one of a second and a third encoding scheme based on an inequality check mapped to the plurality of TCAM cells.

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