公开(公告)号：US20240184180A1

公开(公告)日：2024-06-06

申请号：US18060903

申请日：2022-12-01

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yuan Yuan ,  Stanley Cheung ,  Yiwei Peng ,  Zhihong Huang ,  Marco Fiorentino

IPC: G02F1/225 ,  G02F1/21

CPC classification number: G02F1/225 ,  G02F1/212 ,  G02F2203/50

Abstract: Example optical devices having a Mach-Zehnder interferometer (MZI) with improved linearity are presented. An example optical device may include an MZI and a microring resonator (MRR) optically coupled to any one of a first optical waveguide arm or a second optical waveguide arm, where the MRR is operable in a resonance state and in an off-resonance state during operation of the optical device. The MZI includes a length difference between the first optical waveguide arm and the second optical waveguide arm thereby achieving a quarter-period phase delay between optical signals of the first optical waveguide arm and the second optical waveguide arm such that a superlinear transmission region of the microring resonator is aligned with peaks of an optical output of the MZI improving linearity of the optical output of the MZI.

公开(公告)号：US11637214B2

公开(公告)日：2023-04-25

申请号：US17664462

申请日：2022-05-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

IPC: H01L21/20 ,  H01L29/861 ,  H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18 ,  H04J14/02

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

公开(公告)号：US20230057021A1

公开(公告)日：2023-02-23

申请号：US17664462

申请日：2022-05-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Zhihong Huang ,  Di Liang ,  Yuan Yuan

IPC: H01L31/105 ,  H01L31/028 ,  H04B10/66 ,  H01L27/144 ,  H01L31/18

Abstract: A device may include: a highly doped n+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p− Si charge region having a thickness of about 40-60 nm; and a p+ Ge absorption region disposed on at least a portion of the p− Si charge region; wherein the p+ Ge absorption region is doped across its entire thickness. The thickness of the n+ Si region may be about 100 nm and the thickness of the p− Si charge region may be about 50 nm. The p+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/° C.

公开(公告)号：US11056603B2

公开(公告)日：2021-07-06

申请号：US16569617

申请日：2019-09-12

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Xiaoge Zeng ,  Wayne Victor Sorin

IPC: H01L31/107 ,  G02B6/42 ,  H01L31/02 ,  H01L31/0232

Abstract: Resonant cavity photodetector structures which integrate photodetection and filtering capabilities is described. A resonant cavity photodetector structure generally can comprise a region including a resonator, and an absorption region that can be integrated into a cavity of the resonator. The resonator can perform filtering that is suitable for high-bandwidth optical communications, such as Dense Wavelength Multiplexing (DWDM). In some cases, the resonator is a microring resonator. An absorption region can include a photodiode which performs optical energy detection acting as a photodetector, such as an avalanche photodiode (APD) wherein the photodiode. A coupling distance between the resonator region and the absorption region can be controlled, which allows control of a coupling strength between an optical mode of the resonator and the absorption region such that a quality factor (Q-factor) can be tuned. Thus, by adjusting the Q-factor, the resonant cavity photodetector structure can be tuned to achieve a desirable performance.

公开(公告)号：US10976493B2

公开(公告)日：2021-04-13

申请号：US15119824

申请日：2014-04-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Charles M Santori ,  Di Liang ,  Sonny Vo

IPC: G02B6/293 ,  G02B6/122 ,  G02B6/12 ,  G02F1/225 ,  G02F1/21

Abstract: An example device in accordance with an aspect of the present disclosure includes a diamond waveguide disposed on a substrate. The substrate includes a dielectric material. A tuner is to extend from the substrate, and is disposed at least in part over the waveguide. The tuner includes a tuner electrode to control a variable distance between the tuner and the waveguide to vary an effective refractive index of the waveguide.

公开(公告)号：US20200271864A1

公开(公告)日：2020-08-27

申请号：US15929675

申请日：2020-05-15

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Raymond G. Beausoleil ,  Di Liang ,  Marco Fiorentino ,  Geza Kurczveil ,  Mir Ashkan Seyedi ,  Zhihong Huang

IPC: G02B6/293 ,  H04J14/02 ,  H04Q11/00 ,  H04B10/50

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

公开(公告)号：US10656337B2

公开(公告)日：2020-05-19

申请号：US15718306

申请日：2017-09-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Raymond G. Beausoleil ,  Di Liang ,  Marco Fiorentino ,  Geza Kurczveil ,  Mir Ashkan Seyedi ,  Zhihong Huang

IPC: G02B6/293 ,  H04J14/02 ,  H04Q11/00 ,  H04B10/50 ,  G02B6/12

Abstract: An example system for multi-wavelength optical signal splitting is disclosed. The example disclosed herein comprises a first splitter, a second splitter, and a modulator. The system receives a multi-wavelength optical signal and an electrical signal, wherein the multi-wavelength optical signal comprises a plurality of optical wavelengths and has a power level. The first splitter is to split the plurality of optical wavelengths into a plurality of optical wavelength groups. The second splitter is to split the multi-wavelength optical signal or the plurality of optical wavelength groups into a plurality of lower power signal groups. The modulator is to encode the electrical signal into the plurality of optical wavelength groups, the plurality of lower power signal groups, or a combination thereof.

公开(公告)号：US20190131942A1

公开(公告)日：2019-05-02

申请号：US15768864

申请日：2015-10-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Cheng Li ,  Zhihong Huang

IPC: H03F3/30 ,  H03F1/08 ,  H03F1/26 ,  H03F3/08

Abstract: One embodiment describes a transimpedance amplifier (TIA) system. The system includes an inverter TIA stage interconnecting an input node and an output node and configured to invert an input signal at the input node to provide a first inverted signal component at the output node. The system also includes a noise-canceling inverter stage arranged in parallel with the inverter stage and being configured to invert the input signal to provide a second inverted signal component and to invert noise from the input node. Thus, the first and second inverted signal components constructively combine at the output node and the noise is substantially mitigated at the output node.

公开(公告)号：US20170045762A1

公开(公告)日：2017-02-16

申请号：US15305930

申请日：2014-05-07

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong Huang ,  Di Liang ,  Zhen Peng ,  Raymond G Beausoleil

IPC: G02F1/065 ,  G02F1/025 ,  G02F1/00

CPC classification number: G02F1/065 ,  G02B6/122 ,  G02B6/29341 ,  G02B2006/12061 ,  G02B2006/12085 ,  G02B2006/12142 ,  G02F1/0018 ,  G02F1/025 ,  G02F2201/12 ,  G02F2202/022 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2203/055 ,  G02F2203/15

Abstract: A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.

Abstract translation: 包含聚合物的光调制器包括：包含绝缘材料的基片; 衬底上的硅微环; 衬底上的硅波导与硅微环相邻; 覆盖硅微环和硅波导的电光聚合物; 以及在电光聚合物的顶部上的电接触。 硅微环或相邻硅层的一部分被轻掺杂。 还描述了使用轻掺杂硅微环或相邻的轻掺杂硅层的聚合物包层耗尽型光调制器和聚合物包层载流子注入型光调制器。

公开(公告)号：US20250021809A1

公开(公告)日：2025-01-16

申请号：US18487452

申请日：2023-10-16

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： YIWEI PENG ,  Xian Xiao ,  Yuan Yuan ,  Stanley Cheung ,  Sean Hooten ,  Thomas Van Vaerenbergh ,  Marco Fiorentino ,  Zhihong Huang

IPC: G06N3/067

Abstract: Systems and methods are provided for devices and methods for implementing an optical neural network (ONN) by leveraging resonator structures, such on micro-ring resonators (MRRs). Examples include unit cells configured to perform a linear transformation on optical signals. Each unit cell comprises a plurality of signal mixing components optically coupled to between adjacent waveguides, where each signal mixing component corresponds to a distinct wavelength and is configured to mix optical signals on the adjacent waveguides at the distinct wavelength. Each unit cell also includes a plurality of phase tuning components each corresponding to a distinct wavelength and configured to adjust a phase of a mixed optical signal at the distinct wavelength.