公开(公告)号：US11720014B2

公开(公告)日：2023-08-08

申请号：US17428821

申请日：2020-02-06

Applicant: HOYA CORPORATION

Inventor： Hitoshi Maeda ,  Osamu Nozawa ,  Hiroaki Shishido

IPC: G03F1/32 ,  H01L21/033

CPC classification number: G03F1/32 ,  H01L21/0337

Abstract: The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL>nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL>kU; and in which a thickness dL of the lower layer and a thickness dU of the upper layer satisfy a relation of dL

公开(公告)号：US11022875B2

公开(公告)日：2021-06-01

申请号：US16975658

申请日：2019-02-13

Applicant: HOYA CORPORATION

Inventor： Kazutake Taniguchi ,  Hitoshi Maeda ,  Ryo Ohkubo

IPC: G03F1/32 ,  H01L21/033 ,  H01L21/3065

Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.6 or more for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of k2≤[(−0.188×n2)+0.879] and k2≤[(2.75×n2)−6.945].

公开(公告)号：US11009787B2

公开(公告)日：2021-05-18

申请号：US16970601

申请日：2019-01-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi Maeda ,  Ryo Ohkubo ,  Yasutaka Horigome

IPC: G03F1/32 ,  H01L21/033

Abstract: A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

公开(公告)号：US11442357B2

公开(公告)日：2022-09-13

申请号：US17058631

申请日：2019-05-08

Applicant: HOYA CORPORATION

Inventor： Hitoshi Maeda ,  Hiroaki Shishido ,  Masahiro Hashimoto

IPC: G03F1/26 ,  H01L21/033

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1

公开(公告)号：US11415875B2

公开(公告)日：2022-08-16

申请号：US17231282

申请日：2021-04-15

Applicant: HOYA CORPORATION

Inventor： Hitoshi Maeda ,  Ryo Ohkubo ,  Yasutaka Horigome

IPC: G03F1/32 ,  H01L21/033 ,  G03F1/38

Abstract: A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

公开(公告)号：US11333966B2

公开(公告)日：2022-05-17

申请号：US16755117

申请日：2018-11-20

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Yasutaka Horigome ,  Hitoshi Maeda

IPC: G03F1/32

Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.