公开(公告)号：US11314162B2

公开(公告)日：2022-04-26

申请号：US16492904

申请日：2018-02-28

Applicant: HOYA CORPORATION

Inventor： Kazutake Taniguchi ,  Hiroaki Shishido

IPC: G03F1/54 ,  G03F1/50

Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n≤0.0733×k2+0.4069×k+1.0083  Formula (1) n≥29.316×k2−92.292×k+72.671  Formula (2)

公开(公告)号：US11022875B2

公开(公告)日：2021-06-01

申请号：US16975658

申请日：2019-02-13

Applicant: HOYA CORPORATION

Inventor： Kazutake Taniguchi ,  Hitoshi Maeda ,  Ryo Ohkubo

IPC: G03F1/32 ,  H01L21/033 ,  H01L21/3065

Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.6 or more for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of k2≤[(−0.188×n2)+0.879] and k2≤[(2.75×n2)−6.945].

公开(公告)号：US11314161B2

公开(公告)日：2022-04-26

申请号：US16980357

申请日：2019-02-20

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Kazutake Taniguchi

IPC: G03F1/32 ,  G03F1/34 ,  H01L21/033

Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. The mask blank has a structure where a transparent substrate has stacked thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.5 or more and 3.1 or less for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of a set of specified conditions.

公开(公告)号：US11624979B2

公开(公告)日：2023-04-11

申请号：US17698151

申请日：2022-03-18

Applicant: HOYA CORPORATION

Inventor： Kazutake Taniguchi ,  Hiroaki Shishido

IPC: G03F1/54 ,  G03F1/50

Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n≤0.0733×k2+0.4069×k+1.0083   Formula (1) n≥29.316×k2−92.292×k+72.671   Formula (2)