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公开(公告)号：US11762279B2
公开(公告)日：2023-09-19
申请号：US17668597
申请日：2022-02-10
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido
IPC: G03F1/24 , H01L21/033
CPC classification number: G03F1/24 , H01L21/0332 , H01L21/0337
Abstract: A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
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公开(公告)号：US11630388B2
公开(公告)日：2023-04-18
申请号：US17128499
申请日：2020-12-21
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido
Abstract: Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.
The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.-
公开(公告)号：US10935881B2
公开(公告)日：2021-03-02
申请号：US15743783
申请日：2016-07-11
Applicant: HOYA CORPORATION
Inventor： Takenori Kajiwara , Hiroaki Shishido , Osamu Nozawa
Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.
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公开(公告)号：US10571797B2
公开(公告)日：2020-02-25
申请号：US15553634
申请日：2015-12-24
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Hiroaki Shishido , Ryo Ohkubo
Abstract: A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium.The mask blank 100 has a structure in which the light-semitransmissive film 2, etching mask film 3, and light shielding film 4 are laminated in this order on the transparent substrate 1. It is featured in that the light-semitransmissive film 2 is made of the material containing silicon, the etching mask film 3 is made of the material containing chromium, the light shielding film 4 is made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding film 4 to the etching rate of the etching mask film 3 in the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.
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公开(公告)号：US10527931B2
公开(公告)日：2020-01-07
申请号：US16125900
申请日：2018-09-10
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido , Yasushi Okubo
Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.
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Patent Agency Ranking
公开(公告)号：US10101650B2
公开(公告)日：2018-10-16
申请号：US14910854
申请日：2014-09-05
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Ryo Ohkubo , Hiroaki Shishido , Yasushi Okubo
Abstract: A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.
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公开(公告)号：US11333966B2
公开(公告)日：2022-05-17
申请号：US16755117
申请日：2018-11-20
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Yasutaka Horigome , Hitoshi Maeda
IPC: G03F1/32
Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.
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公开(公告)号：US11226549B2
公开(公告)日：2022-01-18
申请号：US15754927
申请日：2016-06-20
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Hiroaki Shishido
IPC: G03F1/26 , G03F1/48 , G03F1/80 , G03F1/84 , H01L21/027
Abstract: Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light.
The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.-
公开(公告)号：US11054735B2
公开(公告)日：2021-07-06
申请号：US16318216
申请日：2017-06-22
Applicant: HOYA CORPORATION
Inventor： Takenori Kajiwara , Ryo Ohkubo , Hiroaki Shishido , Osamu Nozawa
IPC: G03F1/32 , G03F1/74 , G03F1/26 , G03F1/80 , H01L21/033
Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
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公开(公告)号：US10942441B2
公开(公告)日：2021-03-09
申请号：US16596008
申请日：2019-10-08
Applicant: HOYA CORPORATION
Inventor： Osamu Nozawa , Takenori Kajiwara , Hiroaki Shishido
Abstract: A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.
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