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公开(公告)号：US11054735B2
公开(公告)日：2021-07-06
申请号：US16318216
申请日：2017-06-22
Applicant: HOYA CORPORATION
Inventor： Takenori Kajiwara , Ryo Ohkubo , Hiroaki Shishido , Osamu Nozawa
IPC: G03F1/32 , G03F1/74 , G03F1/26 , G03F1/80 , H01L21/033
Abstract: A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.
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公开(公告)号：US09726972B2
公开(公告)日：2017-08-08
申请号：US14904452
申请日：2014-08-15
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido , Ryo Ohkubo , Osamu Nozawa
IPC: G03F1/32 , G03F1/80 , G03F1/58 , H01L21/027 , C23F4/00
CPC classification number: G03F1/80 , C23F4/00 , G03F1/32 , G03F1/58 , H01L21/027
Abstract: A mask blank wherein damage to a light semitransmissive film due to dry etching for removing a light shielding film is inhibited. Mask blank 100 has a light semitransmissive film 2 and light shielding film 4 laminated on a main surface of a transparent substrate 1. Film 2 can be dry etched with a fluorine-based gas. Film 4 has laminated lower layer 41 and upper layer 42. Lower layer 41 contained tantalum and id substantially free from hafnium, zirconium, and oxygen. Upper layer 42 contains tantalum and one or more of hafnium and zirconium and is substantially free from oxygen excluding the surface layer of the upper layer 42. Between the light semitransmissive film 2 and lower layer 41 is an etching stopper film 3 having etch selectivity with respect to the lower layer 41 in dry etching with an etching gas containing the chlorine-based gas and no oxygen gas.
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公开(公告)号：US11022875B2
公开(公告)日：2021-06-01
申请号：US16975658
申请日：2019-02-13
Applicant: HOYA CORPORATION
Inventor： Kazutake Taniguchi , Hitoshi Maeda , Ryo Ohkubo
IPC: G03F1/32 , H01L21/033 , H01L21/3065
Abstract: Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index n1 of 1.5 or more for light of 193 nm wavelength and an extinction coefficient k1 of 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index n2 of 2.6 or more for light of 193 nm wavelength and an extinction coefficient k2 of 0.4 or less for light of 193 nm wavelength, and the refractive index n2 and the extinction coefficient k2 satisfy at least one of k2≤[(−0.188×n2)+0.879] and k2≤[(2.75×n2)−6.945].
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公开(公告)号：US09952497B2
公开(公告)日：2018-04-24
申请号：US15286635
申请日：2016-10-06
Applicant: HOYA CORPORATION
Inventor： Yasushi Okubo , Ryo Ohkubo
Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
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公开(公告)号：US09494852B2
公开(公告)日：2016-11-15
申请号：US14414357
申请日：2013-06-25
Applicant: HOYA CORPORATION
Inventor： Yasushi Okubo , Ryo Ohkubo
Abstract: A mask blank suitable for fabricating a phase shift mask having a thin film pattern composed of a material enabling dry etching with a fluorine-based gas and a substrate-engraved pattern. The mask blank 100 is used to fabricate a phase shift mask having a thin film pattern and a substrate-engraved pattern. The mask blank 100 has a structure in which an etching stopper film 2, a thin film for pattern formation 3 and an etching mask film 4 are laminated in this order on a transparent substrate 1. The etching stopper film 2 is made of a material that contains chromium and oxygen and the oxygen content thereof is more than 50 at %. The thin film 3 is made of a material that can be dry-etched by a fluorine-based gas. The etching mask film 4 is made of a material that contains chromium, the chromium content thereof is not less than 45 at %, and the oxygen content thereof is not more than 30 at %.
Abstract translation: 一种适用于制造具有薄膜图案的相移掩模的掩模坯料，该薄膜图案由能够利用氟基气体进行干蚀刻的材料和基板刻图形构成。 掩模坯料100用于制造具有薄膜图案和基板雕刻图案的相移掩模。 掩模坯料100具有其中在透明基板1上依次层压蚀刻阻挡膜2，图案形成用薄膜3和蚀刻掩模膜4的结构。蚀刻阻挡膜2由以下材料制成： 含有铬和氧，氧含量大于50原子％。 薄膜3由可以通过氟基气体进行干蚀刻的材料制成。 蚀刻掩模膜4由含铬的材料制成，铬含量不小于45原子％，氧含量不大于30原子％。
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Patent Agency Ranking
6.发明授权公开(公告)号：US09075315B2
公开(公告)日：2015-07-07
申请号：US13628790
申请日：2012-09-27
Applicant: HOYA CORPORATION
Inventor： Kazuya Sakai , Ryo Ohkubo , Osamu Nozawa , Toshiyuki Suzuki
Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.
Abstract translation: 本发明是用于制造反射掩模的反射掩模坯料，其在基板上依次具有多层反射膜，吸收膜和蚀刻掩模膜的层叠结构，其中蚀刻掩模膜包括含有 铬，吸收膜包含含有钽的材料，在与基板相反的一侧的吸收膜的表面层上形成高度氧化层，并且通过X射线分析时形成高度氧化层的Ta 4f窄谱 光电子能谱具有超过23eV的结合能的最大峰值。
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公开(公告)号：US12153338B2
公开(公告)日：2024-11-26
申请号：US17438194
申请日：2020-02-20
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido , Ryo Ohkubo , Osamu Nozawa
IPC: G03F1/32
Abstract: A mask blank 100 has a structure in which a pattern-forming thin film 3 and a hard mask film 4 are formed on a transparent substrate 1 in this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask film 4, a content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.
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公开(公告)号：US11435662B2
公开(公告)日：2022-09-06
申请号：US17391593
申请日：2021-08-02
Applicant: HOYA CORPORATION
Inventor： Ryo Ohkubo , Hiroaki Shishido , Takashi Uchida
IPC: G03F1/32
Abstract: In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
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公开(公告)号：US11119400B2
公开(公告)日：2021-09-14
申请号：US16603127
申请日：2018-04-02
Applicant: HOYA CORPORATION
Inventor： Ryo Ohkubo , Hiroaki Shishido , Takashi Uchida
IPC: G03F1/32
Abstract: In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.
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公开(公告)号：US10365555B2
公开(公告)日：2019-07-30
申请号：US14892260
申请日：2014-05-19
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido , Osamu Nozawa , Ryo Ohkubo
Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.
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