Method and device for real-time attitude angle measurement based on field of view effect of birefringent crystal

    公开(公告)号:US11372146B2

    公开(公告)日:2022-06-28

    申请号:US17008663

    申请日:2020-09-01

    Abstract: A method and a device for real-time attitude angle measurement based on the field of view effect of the birefringent crystal are provided. The device includes a high-speed polarization measurement module and an object attitude adjustment module connected to each other. The high-speed polarization measurement module includes a polarizer unit and a real-time polarization analyzer unit, respectively located on two opposite sides of the object attitude adjustment module. The object attitude adjustment module includes an attitude angle controller, a roll angle adjustment unit, a pitch angle adjustment unit, a yaw angle adjustment unit, and a height adjustment unit respectively connected to the attitude angle controller, and a birefringent crystal. The method includes an algorithm for real-time extraction of object attitude angle according to optical parameters measured by the high-speed polarization measurement module, and a method for compensating attitude angle measurement errors.

    METHOD AND DEVICE FOR REAL-TIME ATTITUDE ANGLE MEASUREMENT BASED ON FIELD OF VIEW EFFECT OF BIREFRINGENT CRYSTAL

    公开(公告)号:US20210302640A1

    公开(公告)日:2021-09-30

    申请号:US17008663

    申请日:2020-09-01

    Abstract: A method and a device for real-time attitude angle measurement based on the field of view effect of the birefringent crystal are provided. The device includes a high-speed polarization measurement module and an object attitude adjustment module connected to each other. The high-speed polarization measurement module includes a polarizer unit and a real-time polarization analyzer unit, respectively located on two opposite sides of the object attitude adjustment module. The object attitude adjustment module includes an attitude angle controller, a roll angle adjustment unit, a pitch angle adjustment unit, a yaw angle adjustment unit, and a height adjustment unit respectively connected to the attitude angle controller, and a birefringent crystal. The method includes an algorithm for real-time extraction of object attitude angle according to optical parameters measured by the high-speed polarization measurement module, and a method for compensating attitude angle measurement errors.

    METHOD FOR MEASURING OPTICAL PROPERTIES AND GEOMETRIC PROPERTIES OF THIN FILM MATERIAL

    公开(公告)号:US20250003866A1

    公开(公告)日:2025-01-02

    申请号:US18461487

    申请日:2023-09-05

    Abstract: Disclosed is a method for measuring optical properties and geometric properties of a thin film material, which belongs to the field of ellipsometry. The method realizes the automation of the ellipsometry data analysis with accurate results and includes using a spline model and a forward optical property model to generate a training set; training a neural network model; sequentially inputting preliminary results of geometric parameters and spline parameters of a material obtained by inputting the measured optical characterization quantity into the neural network into the spline model and the forward optical property model to obtain a theoretical optical characterization quantity. After optimizing the neural network model by using the deviation between the theory and the measured optical characterization quantity, the predicted value of the output is the final geometric and optical property parameters of the material.

    METHOD AND SYSTEM FOR CORRECTING LITHOGRAPHY PROCESS HOTSPOTS BASED ON STRESS DAMPING ADJUSTMENT

    公开(公告)号:US20230046115A1

    公开(公告)日:2023-02-16

    申请号:US17564241

    申请日:2021-12-29

    Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

    QUASI-DYNAMIC IN SITU ELLIPSOMETRY METHOD AND SYSTEM FOR MEASURING PHOTORESIST EXPOSURE PROCESS

    公开(公告)号:US20240402614A1

    公开(公告)日:2024-12-05

    申请号:US18488047

    申请日:2023-10-17

    Abstract: The disclosure provides a quasi-dynamic in situ ellipsometry method and system for measuring a photoresist exposure process. The method includes: obtaining a measured Muller matrix of a photoresist at different exposure times by a Muller matrix ellipsometer; building a forward optical model of the photoresist and obtaining a theoretical Mueller matrix; inverting and fitting the measured Mueller matrix and the theoretical Mueller matrix and obtaining ellipsometric parameters of the photoresist at different times, an average extinction coefficient, and a film thickness; building a relational model of a Dill parameter of the photoresist and optical properties of the photoresist, and an exposure model of the photoresist; building a relational model of a theoretical extinction coefficient and the extinction coefficient and obtaining theoretical extinction coefficients of the photoresist after different exposure times; and inverting and fitting the average extinction coefficient and the theoretical extinction coefficient and obtaining the Dill parameter.

    Rapid measurement method for ultra-thin film optical constant

    公开(公告)号:US11662197B2

    公开(公告)日:2023-05-30

    申请号:US16510983

    申请日:2019-07-15

    CPC classification number: G01B11/0641

    Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ρ of the ultra-thin film:





    ρ
    =


    r
    p


    r
    s



    ;




    S2: performing a second-order Taylor expansion to





    ρ
    =


    r
    p


    r
    s






    at df=0 while taking 2πdf/λ as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.

    Snapshot type overlay error measuring device and measuring method

    公开(公告)号:US11619883B2

    公开(公告)日:2023-04-04

    申请号:US17407149

    申请日:2021-08-19

    Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.

    METHOD FOR PTYCHOGRAPHY POSITION CORRECTION BASED ON PROBE WEIGHTING

    公开(公告)号:US20240377626A1

    公开(公告)日:2024-11-14

    申请号:US18346255

    申请日:2023-07-02

    Abstract: The disclosure provides a method for ptychography position correction based on probe weighting. The method includes: collecting diffraction light field intensity information and simultaneously initializing information functions of illumination probes and a sample to be tested and probe positions; obtaining and importing an exit wave into a propagation model to obtain a simulated diffraction light field and replacing the diffraction light field intensity information to obtain an updated diffraction light field; importing the updated diffraction light field into a backpropagation model and obtaining a diffraction exit wave and updating the information functions of the sample to be tested and the illumination probes at each scan position; and forming a probe matrix around the probe positions, updating the probe positions after calculating a correlation, and repeating the above steps to iterate until the predetermined number of iterations is completed or a predetermined condition is reached.

    Method for measuring dielectric tensor of material

    公开(公告)号:US11644413B2

    公开(公告)日:2023-05-09

    申请号:US17054170

    申请日:2020-05-15

    CPC classification number: G01N21/211 G06F17/16 G01N2021/213

    Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ε(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.

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