Tunable ring resonator multiplexers

    公开(公告)号:US11002912B2

    公开(公告)日:2021-05-11

    申请号:US15781560

    申请日:2015-12-11

    Abstract: In the examples provided herein, a system includes an input waveguide, where a first end of the input waveguide is coupled to a light-emitting optical transmitter to allow the emitted light to enter the input waveguide, and a first ring resonator tunable to be resonant at a first resonant wavelength, wherein the first ring resonator is positioned near the input waveguide to couple a light at the first resonant wavelength from the input waveguide to the first ring resonator. The system also has a bus waveguide positioned to couple the light at the first resonant wavelength in the first ring resonator to the bus waveguide, and a mechanism to wavelength-tune the first ring resonator to a particular wavelength.

    POLARIZATION DIVERSITY OPTICAL INTERFACE ASSEMBLY

    公开(公告)号:US20200132933A1

    公开(公告)日:2020-04-30

    申请号:US16175578

    申请日:2018-10-30

    Abstract: Examples herein relate to polarization diversity optical interface assemblies including a single mode optical fiber and first and second grating couplers disposed on a substrate. The first and second grating couplers are coupled to first and second waveguides, respectively. The assemblies further includes an optical connector to couple light between the single mode optical fiber and each of the first and second grating couplers. The optical connector includes a ferrule and a walk-off crystal. The ferrule is coupled to a portion of the single mode optical fiber. The walk-off crystal is configured to spatially separate the light into first and second orthogonal polarization modes prior to passing through the respective first and second grating couplers and/or combine the first and second polarization modes of the light prior to passing through the single mode optical fiber.

    SILICON PHOTONIC SOLDER REFLOWABLE ASSEMBLY
    5.
    发明申请

    公开(公告)号:US20200049909A1

    公开(公告)日:2020-02-13

    申请号:US16526374

    申请日:2017-01-30

    Abstract: In some examples a silicon photonic (SiPh) solder reflowable assembly may comprise a silicon interposer bonded to an organic substrate, the silicon interposer having an optical grating disposed on the interposer to couple an optical signal, a lens array chip, the lens array comprising one or more lenses on a wafer, the lens array chip flip chip reflowed to the silicon interposer by a bonding agent and the one or more lenses having a predetermined shape that expands, collimates, and tilts a beam of the optical signal exiting the grating. The wafer has a coefficient of thermal expansion (CTE) that matches silicon and the one or more lenses and the grating are aligned in such a way the optical signal enters the grating at a desired angle.

    Low impedance VCSELs
    6.
    发明授权

    公开(公告)号:US10530129B2

    公开(公告)日:2020-01-07

    申请号:US15750833

    申请日:2015-08-10

    Abstract: In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer end a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.

    ADAPTOR FOR OPTICAL COMPONENT OF OPTICAL CONNECTOR

    公开(公告)号:US20190018203A1

    公开(公告)日:2019-01-17

    申请号:US15650197

    申请日:2017-07-14

    Abstract: An example adaptor for passively aligning an optical component of an optical connector with a ferrule of the optical connector. The adaptor may include first alignment feature and second alignment features. The first alignment features may be to, when the adaptor is connected to the ferrule, cooperate with alignment features of the ferrule to passively force the adaptor into a first configuration relative to the ferrule. The second alignment features may be arranged such that, when the optical component is held in contact with the second alignment features and the adaptor is in the first configuration relative to the ferrule, the optical component is in an aligned position relative to the ferrule.

    Wavelength division multiplexing (WDM) optical modules

    公开(公告)号:US10120149B1

    公开(公告)日:2018-11-06

    申请号:US15649073

    申请日:2017-07-13

    Abstract: Examples herein relate to a Wavelength Division Multiplexing (WDM) optical module configured for M optical fibers, N WDM wavelengths and M×N optical signals. The module comprises an active silicon interposer, the interposer comprises a (M/2)×N array of photodetectors established on a front side of the interposer and N chips for the N WDM wavelengths. Each chip comprises M lenses for M optical signals, the M lenses established on a back side of a GaAs substrate, the M lenses comprising a first group of M/2 lenses to focus M/2 optical input signals onto M/2 photodetectors of the (M/2)×N array, and a second group of M/2 lenses to collimate M/2 optical output signals, and M/2 Vertical Cavity Surface Emitting Lasers (VCSELs) established on a front side of the GaAs substrate to generate the M/2 optical output signals.

    OPTOELECTRONIC DEVICES COMPRISING BURIED WIDE BANDGAP HIGH THERMAL CONDUCTIVITY MATERIAL

    公开(公告)号:US20240388061A1

    公开(公告)日:2024-11-21

    申请号:US18320608

    申请日:2023-05-19

    Abstract: Optical devices and methods of fabricating the same are provided. An example of the disclosed optical devices includes an epitaxial mesa formed on a silicon substrate and a single crystal semiconductor material layer formed between the silicon substrate and the epitaxial mesa. The single crystal semiconductor material layer comprises a bandgap that is wider than a bandgap of the epitaxial mesa. The example optical device also includes a semiconductor device layer formed between the single crystal semiconductor material layer and the epitaxial mesa. Examples of the optical devices include vertical injection optical devices, which can include an optically active region. In these examples, the bandgap of the single crystal semiconductor material layer is wider than a bandgap of the optically active region.

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