公开(公告)号：US20070054503A1

公开(公告)日：2007-03-08

申请号：US11510679

申请日：2006-08-28

Applicant: Hiroyuki Takaba ,  Toshihide Nabatame ,  Masaru Kadoshima

Inventor： Hiroyuki Takaba ,  Toshihide Nabatame ,  Masaru Kadoshima

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0228 ,  C23C16/44 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/28079 ,  H01L21/28194 ,  H01L21/3141 ,  H01L29/495 ,  H01L29/517

Abstract: A method of forming a film on a substrate includes a first step of carrying out first film formation on an insulation layer formed on the substrate by an ALD process, and a second step of carrying out second film formation in continuation to the first step by a CVD process.

Abstract translation: 在衬底上形成膜的方法包括：通过ALD工艺在形成在衬底上的绝缘层上进行第一膜形成的第一步骤;以及第二步骤，通过第一步骤进行第二膜形成 CVD工艺。

公开(公告)号：US20120115334A1

公开(公告)日：2012-05-10

申请号：US13073957

申请日：2011-03-28

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/314

CPC classification number: H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274

Abstract: Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma from the process gas, and exposing the substrate to the plasma to deposit carbon-nitrogen-containing film on the substrate. In some embodiments, the carbon-nitrogen-containing film can include a CN film, a CNO film, a Si-doped CN film, or a Si-doped CNO film.

Abstract translation: 本发明的实施例描述了一种用于形成用于半导体器件的电介质膜的方法。 该方法包括在包含微波等离子体源的处理室中提供衬底，将包含具有碳 - 氮分子间键的沉积气体的非含金属工艺气体引入处理室，从工艺气体形成等离子体;以及 将衬底暴露于等离子体以在衬底上沉积含碳氮膜。 在一些实施方案中，含碳氮膜可以包括CN膜，CNO膜，掺杂Si的CN膜或Si掺杂的CNO膜。

公开(公告)号：US20100175713A1

公开(公告)日：2010-07-15

申请号：US12528734

申请日：2008-02-18

Applicant: Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

Inventor： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC: B08B7/00 ,  C23F1/08

CPC classification number: C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

Abstract: A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Abstract translation: 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。

公开(公告)号：US08399366B1

公开(公告)日：2013-03-19

申请号：US13217813

申请日：2011-08-25

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/31

CPC classification number: H01L21/02115 ,  B82Y10/00 ,  C23C16/26 ,  C23C16/511 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02527 ,  H01L21/02592 ,  H01L21/0262 ,  H01L51/0045

Abstract: A method is provided for forming a semiconductor device. The method includes providing a substrate on a substrate holder in a process chamber, where the substrate contains a raised feature having a top surface and a sidewall surface, and flowing a process gas into the process chamber, where the process gas contains a hydrocarbon gas, an oxygen-containing gas, and optionally argon or helium. The method further includes maintaining a process gas pressure of at least 1 Torr in the process chamber, forming a plasma from the process gas using a microwave plasma source, and exposing the substrate to the plasma to deposit a conformal amorphous carbon film over the surfaces of the raised feature.

Abstract translation: 提供了形成半导体器件的方法。 该方法包括在处理室中的衬底保持器上提供衬底，其中衬底包含具有顶表面和侧壁表面的凸起特征，并且将工艺气体流入处理室，其中工艺气体含有烃气体， 含氧气体，以及任选的氩气或氦气。 该方法还包括在处理室中保持至少1Torr的工艺气体压力，使用微波等离子体源从工艺气体形成等离子体，以及将衬底暴露于等离子体以将适形非晶碳膜沉积在 凸起的特点。

公开(公告)号：US20130052808A1

公开(公告)日：2013-02-28

申请号：US13217813

申请日：2011-08-25

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/205

CPC classification number: H01L21/02115 ,  B82Y10/00 ,  C23C16/26 ,  C23C16/511 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02527 ,  H01L21/02592 ,  H01L21/0262 ,  H01L51/0045

Abstract: A method is provided for forming a semiconductor device. The method includes providing a substrate on a substrate holder in a process chamber, where the substrate contains a raised feature having a top surface and a sidewall surface, and flowing a process gas into the process chamber, where the process gas contains a hydrocarbon gas, an oxygen-containing gas, and optionally argon or helium. The method further includes maintaining a process gas pressure of at least 1 Torr in the process chamber, forming a plasma from the process gas using a microwave plasma source, and exposing the substrate to the plasma to deposit a conformal amorphous carbon film over the surfaces of the raised feature.

Abstract translation: 提供了形成半导体器件的方法。 该方法包括在处理室中的衬底保持器上提供衬底，其中衬底包含具有顶表面和侧壁表面的凸起特征，并且将工艺气体流入处理室，其中工艺气体含有烃气体， 含氧气体，以及任选的氩气或氦气。 该方法还包括在处理室中保持至少1Torr的工艺气体压力，使用微波等离子体源从工艺气体形成等离子体，以及将衬底暴露于等离子体以将适形非晶碳膜沉积在 凸起的特点。

公开(公告)号：US08962454B2

公开(公告)日：2015-02-24

申请号：US13073957

申请日：2011-03-28

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02

CPC classification number: H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274

Abstract: Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma from the process gas, and exposing the substrate to the plasma to deposit carbon-nitrogen-containing film on the substrate. In some embodiments, the carbon-nitrogen-containing film can include a CN film, a CNO film, a Si-doped CN film, or a Si-doped CNO film.

Abstract translation: 本发明的实施例描述了一种用于形成用于半导体器件的电介质膜的方法。 该方法包括在包含微波等离子体源的处理室中提供衬底，将包含具有碳 - 氮分子间键的沉积气体的非含金属工艺气体引入处理室，从工艺气体形成等离子体;以及 将衬底暴露于等离子体以在衬底上沉积含碳氮膜。 在一些实施方案中，含碳氮膜可以包括CN膜，CNO膜，掺杂Si的CN膜或Si掺杂的CNO膜。

公开(公告)号：US08778810B2

公开(公告)日：2014-07-15

申请号：US13380843

申请日：2010-06-25

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/26

CPC classification number: H01J37/32192 ,  B05D1/62 ,  B05D5/083 ,  B05D7/52 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/45563 ,  H01J37/32091 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3127

Abstract: A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.

Abstract translation: 制造具有氟碳层作为绝缘层的半导体器件的方法包括以下步骤：使用由微波功率激发的等离子体形成第一氟碳化合物（CFx1）层，并使用由RF电力激发的等离子体形成第二碳氟化合物（CFx2）层。

公开(公告)号：US07511338B2

公开(公告)日：2009-03-31

申请号：US11515797

申请日：2006-09-06

Applicant: Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

Inventor： Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

IPC: H01L23/62

CPC classification number: H01L21/823842 ,  H01L21/28185 ,  H01L29/6659 ,  H01L29/7833

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract translation: 本发明的一个目的是简化n沟道MIS晶体管和具有由金属材料形成的栅电极的p沟道MIS晶体管的制造工艺。 为了实现，通过图案化沉积在栅极绝缘体上的钌膜，同时形成n沟道MIS晶体管和p沟道MIS晶体管中的每一个的栅电极。 接下来，通过将氧气引入每个栅电极，将栅电极转变为具有高功函数的栅电极。 此后，通过选择性地还原n沟道MIS晶体管的栅电极，将其转换成具有低功函数的栅电极。

公开(公告)号：US20080293229A1

公开(公告)日：2008-11-27

申请号：US12219897

申请日：2008-07-30

Applicant: Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

Inventor： Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

IPC: H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28185 ,  H01L29/6659 ,  H01L29/7833

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract translation: 本发明的一个目的是简化n沟道MIS晶体管和具有由金属材料形成的栅电极的p沟道MIS晶体管的制造工艺。 为了实现，通过图案化沉积在栅极绝缘体上的钌膜，同时形成n沟道MIS晶体管和p沟道MIS晶体管中的每一个的栅电极。 接下来，通过将氧气引入每个栅电极，将栅电极转变为具有高功函数的栅电极。 此后，通过选择性地还原n沟道MIS晶体管的栅电极，将其转换成具有低功函数的栅电极。

公开(公告)号：US08419859B2

公开(公告)日：2013-04-16

申请号：US12528734

申请日：2008-02-18

Applicant: Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

Inventor： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC: B08B7/00

CPC classification number: C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

Abstract: A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

Abstract translation: 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。