公开(公告)号：US08748313B2

公开(公告)日：2014-06-10

申请号：US12897618

申请日：2010-10-04

Applicant: Hsin Chin Chen

Inventor： Hsin Chin Chen

IPC: H01L21/44

CPC classification number: G03F1/76 ,  G03F1/54 ,  G03F1/68

Abstract: A method for making a mask for semiconductor manufacturing. The method includes providing a base layer, forming a conductive layer on the base layer, and forming a photoresist layer on the conductive layer. Additionally, the method includes exposing selectively the photoresist layer to an energy illumination, developing the photoresist layer by removing a first portion of the photoresist layer, and depositing a metal layer by an electroforming process. The electroforming process includes submerging the conductive layer into a chemical bath, and applying a deposition voltage across a negative electrode and a positive electrode. Moreover, the method includes removing a second portion of the photoresist layer, and removing a first portion of the conductive layer.

Abstract translation: 一种制造用于半导体制造的掩模的方法。 该方法包括提供基底层，在基底层上形成导电层，并在导电层上形成光致抗蚀剂层。 另外，该方法包括将光致抗蚀剂层选择性地暴露于能量照明，通过去除光致抗蚀剂层的第一部分和通过电铸工艺沉积金属层来显影光致抗蚀剂层。 电铸工艺包括将导电层浸入化学浴中，并且在负电极和正极上施加沉积电压。 此外，该方法包括去除光致抗蚀剂层的第二部分，以及去除导电层的第一部分。