Abstract:
The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.
Abstract:
An alignment method for optical axes of a composite waveplate includes rotating a rotatable waveplate, which rotates about a central axis with respect to a fixed waveplate, and adjusting the rotation angle thereof until the differences between the spectral parameters of the composite waveplate and ideal spectral parameters are smaller than preset values.
Abstract:
A device for measuring a large-area and massive scattered field in nanoscale. The device includes a polarization state generator disposed on an output optical path of a laser source, a polarization state analyzer operating to demodulate a polarized light beam emitted thereon, a first objective lens and a first lens disposed on an optical path of a sample stage, and a scanning mirror disposed on an optical path in front of or at the rear of the polarization state generator.
Abstract:
A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.