Optimization methods of polarization modulator and polarization measurement system

    公开(公告)号:US11143804B2

    公开(公告)日:2021-10-12

    申请号:US16162382

    申请日:2018-10-16

    Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.

    Method for extracting critical dimension of semiconductor nanostructure
    4.
    发明授权
    Method for extracting critical dimension of semiconductor nanostructure 有权
    提取半导体纳米结构临界尺寸的方法

    公开(公告)号:US09070091B2

    公开(公告)日:2015-06-30

    申请号:US13754925

    申请日:2013-01-31

    CPC classification number: G06N99/005

    Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.

    Abstract translation: 一种用于提取半导体纳米结构的临界尺寸的方法。 该方法包括:1)确定要提取的每个参数的值范围,从而生成电子光谱数据库,并使用训练光谱和支持向量机(SVM)训练网络进行训练; 2)训练后采用SVM映射测得的光谱,得到相应的电子光谱数据库; 和3)采用搜索算法在对应的电子光谱数据库中搜索最佳模拟光谱,对应于模拟光谱的模拟参数是要提取的半导体纳米结构的临界尺寸。

Patent Agency Ranking