公开(公告)号：US10170687B2

公开(公告)日：2019-01-01

申请号：US15387350

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Mauricio Manfrini ,  Christoph Adelmann

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (STMG), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. A magnetic tunneling junction (MTJ) is formed in each of the input zones and the output zone, where the MTJ includes a non-magnetic layer interposed between a free layer stack and a hard layer. The free layer stack in turn includes a bulk perpendicular magnetic anisotropy (PMA) layer on a seed layer, a magnetic layer formed on and in contact with the bulk PMA layer, and a non-magnetic layer formed on the magnetic layer. Each of the bulk PMA layer and the seed layer is configured as a common layer for each of the input zones and the output zone.

公开(公告)号：US09685322B2

公开(公告)日：2017-06-20

申请号：US14488857

申请日：2014-09-17

Applicant: IMEC VZW

Inventor： Christoph Adelmann ,  Silvia Armini

IPC: H01L21/469 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02318 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02107 ,  H01L21/02112 ,  H01L21/02118 ,  H01L21/0226 ,  H01L21/02299 ,  H01L21/02304 ,  H01L29/06

Abstract: The present disclosure relates to a method (100) for depositing a layer on a III-V semiconductor substrate, in which this method comprises providing (102) a passivated III-V semiconductor substrate comprising a III-V semiconductor surface which has a surface passivation layer provided thereon for preventing oxidation of said III-V semiconductor surface. The surface passivation layer comprises a self-assembled monolayer material obtainable by the reaction on the surface of an organic compound of formula R-A, wherein A is selected from SH, SeH, TeH and SiX3. X is selected from H, Cl, O—CH3, O—C2H5, and O—C3H2, and R is a hydrocarbyl, fluorocarbyl or hydrofluorocarbyl comprising from 5 to 20 carbon atoms. The method further comprises thermally annealing (107) the III-V semiconductor substrate in a non-oxidizing environment such as to decompose the self-assembled monolayer material, and depositing (108) a layer on the III-V semiconductor surface in the non-oxidizing environment.

公开(公告)号：US10211809B2

公开(公告)日：2019-02-19

申请号：US15143228

申请日：2016-04-29

Applicant: IMEC VZW

Inventor： Xavier Rottenberg ,  Christoph Adelmann

IPC: G01B7/14 ,  H03H9/22 ,  H01L41/00 ,  H01L41/12 ,  G01B7/24 ,  G01R33/12 ,  H03H9/17 ,  H03H9/24 ,  G01R33/18 ,  H03B15/00 ,  H01F10/12 ,  H01F10/14 ,  B82Y25/00

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

公开(公告)号：US20150091142A1

公开(公告)日：2015-04-02

申请号：US14488857

申请日：2014-09-17

Applicant: IMEC VZW

Inventor： Christoph Adelmann ,  Silvia Armini

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02318 ,  H01L21/02046 ,  H01L21/02052 ,  H01L21/02107 ,  H01L21/02112 ,  H01L21/02118 ,  H01L21/0226 ,  H01L21/02299 ,  H01L21/02304 ,  H01L29/06

Abstract: The present disclosure relates to a method (100) for depositing a layer on a III-V semiconductor substrate, in which this method comprises providing (102) a passivated III-V semiconductor substrate comprising a III-V semiconductor surface which has a surface passivation layer provided thereon for preventing oxidation of said III-V semiconductor surface. The surface passivation layer comprises a self-assembled monolayer material obtainable by the reaction on the surface of an organic compound of formula R-A, wherein A is selected from SH, SeH, TeH and SiX3. X is selected from H, Cl, O—CH3, O—C2H5, and O—C3H2, and R is a hydrocarbyl, fluorocarbyl or hydrofluorocarbyl comprising from 5 to 20 carbon atoms. The method further comprises thermally annealing (107) the III-V semiconductor substrate in a non-oxidizing environment such as to decompose the self-assembled monolayer material, and depositing (108) a layer on the III-V semiconductor surface in the non-oxidizing environment.

Abstract translation: 本公开涉及一种用于在III-V半导体衬底上沉积层的方法（100），其中该方法包括提供（102）钝化的III-V半导体衬底，其包括具有表面钝化的III-V半导体表面 层，用于防止所述III-V半导体表面的氧化。 表面钝化层包括通过在式R-A的有机化合物的表面上的反应获得的自组装单层材料，其中A选自SH，SeH，TeH和SiX 3。 X选自H，Cl，O-CH 3，O-C 2 H 5和O-C 3 H 2，R是包含5至20个碳原子的烃基，氟代碳基或氢氟碳基。 该方法还包括在非氧化环境中对III-V半导体衬底进行热退火（107），以分解自组装单层材料，以及在非绝缘层中的III-V半导体表面上沉积（108） 氧化环境。

公开(公告)号：US09786795B2

公开(公告)日：2017-10-10

申请号：US14508906

申请日：2014-10-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

Inventor： Bogdan Govoreanu ,  Christoph Adelmann ,  Leqi Zhang ,  Malgorzata Jurczak

IPC: H01L29/861 ,  H01L29/16 ,  H01L29/45 ,  H01L45/00 ,  H01L29/88 ,  H01L27/24

CPC classification number: H01L29/861 ,  H01L27/2418 ,  H01L29/16 ,  H01L29/1604 ,  H01L29/456 ,  H01L29/88 ,  H01L45/00

Abstract: The disclosed technology generally relates to semiconductor devices and more particularly to selector devices for memory devices having a resistance switching element, particularly resistive random access memory (RRAM) devices. In one aspect, a selector device includes a first barrier structure comprising a first metal and a first semiconductor or a first low bandgap dielectric material, and a second barrier structure comprising a second metal and a second semiconductor or a second low bandgap dielectric material. The selector device additionally includes an insulator interposed between the first semiconductor or the first low bandgap dielectric material and the second semiconductor or the second low bandgap dielectric material. The first barrier structure, the insulator, and the second barrier structure are stacked to form a metal/semiconductor or low bandgap dielectric/insulator/semiconductor or low bandgap dielectric/metal structure.

公开(公告)号：US20160322955A1

公开(公告)日：2016-11-03

申请号：US15143228

申请日：2016-04-29

Applicant: IMEC VZW

Inventor： Xavier Rottenberg ,  Christoph Adelmann

IPC: H03H9/22 ,  G01B7/24 ,  G01R33/12 ,  H03H9/17 ,  H03H9/24

CPC classification number: H03H9/22 ,  B82Y25/00 ,  G01B7/24 ,  G01R33/1284 ,  G01R33/18 ,  H01F10/126 ,  H01F10/14 ,  H01L41/00 ,  H01L41/12 ,  H03B15/006 ,  H03H9/171 ,  H03H9/24

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to a device configured as one or both of a spin wave generator or a spin wave detector. In one aspect, the device includes a magnetostrictive film and a deformation film physically connected to the magnetorestrictive film. The device also includes an acoustic isolation surrounding the magnetostrictive film and the deformation film to form an acoustic resonator. When the device is configured as the spin wave generator, the deformation film is configured to undergo a change physical dimensions in response to an actuation, where the change in the physical dimensions of the deformation film induces a mechanical stress in the magnetostrictive film to cause a change in the magnetization of the magnetostrictive film. When the device is configured as the spin wave detector, the magnetostrictive film is configured to undergo to a change in physical dimensions in response to a change in magnetization, wherein the change in the physical dimensions of the magnetostrictive film induces a mechanical stress in the deformation film to cause generation of electrical power by the deformation film.

Abstract translation: 所公开的技术通常涉及半导体器件，更具体地涉及被配置为自旋波发生器或自旋波检测器中的一者或两者的器件。 在一个方面，该装置包括物理连接到磁致伸缩膜的磁致伸缩膜和变形膜。 该装置还包括围绕磁致伸缩膜和变形膜的声学隔离以形成声谐振器。 当设备被配置为自旋波发生器时，变形膜被配置为响应于致动而经历变化的物理尺寸，其中变形膜的物理尺寸的变化在磁致伸缩膜中引起机械应力，从而导致 磁致伸缩膜的磁化变化。 当该器件被配置为自旋波检测器时，磁致伸缩膜被配置为响应于磁化的变化而经历物理尺寸的变化，其中磁致伸缩膜的物理尺寸的变化在变形中引起机械应力 电影使变形膜产生电力。