公开(公告)号：US11052348B2

公开(公告)日：2021-07-06

申请号：US15854375

申请日：2017-12-26

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching Hsiao ,  Chu-Pi Jeng ,  Kuo-Lun Huang ,  Mu-Hsi Sung ,  Keng-Yang Chen ,  Li-Duan Tsai

IPC: B01D53/46 ,  C01B32/984 ,  C01B35/02 ,  C01B32/97 ,  C01B32/20 ,  B01J3/00 ,  B01J8/02 ,  B01J8/00

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.

公开(公告)号：US11046582B2

公开(公告)日：2021-06-29

申请号：US16729065

申请日：2019-12-27

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching Hsiao ,  Chu-Pi Jeng ,  Mu-Hsi Sung ,  Kuo-Lun Huang

IPC: C01B32/05 ,  C01B32/963 ,  C01B32/97

Abstract: A method of purifying silicon carbide powder includes: providing a container with a surface coated by a nitrogen-removal metal layer, wherein the nitrogen-removal metal layer is tantalum, niobium, tungsten, or a combination thereof; putting a silicon carbide powder into the container to contact the nitrogen-removal metal layer; and heating the silicon carbide powder under an inert gas at a pressure of 400 torr to 760 torr at 1700° C. to 2300° C. for 2 to 10 hours, thereby reducing the nitrogen content of the silicon carbide powder.

公开(公告)号：US11541351B2

公开(公告)日：2023-01-03

申请号：US17327131

申请日：2021-05-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ta-Ching Hsiao ,  Chu-Pi Jeng ,  Kuo-Lun Huang ,  Mu-Hsi Sung ,  Keng-Yang Chen ,  Li-Duan Tsai

IPC: B01D53/46 ,  C01B32/984 ,  C01B35/02 ,  C01B32/97 ,  C01B32/20 ,  B01J3/00 ,  B01J8/02 ,  B01J8/00

Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.