公开(公告)号：US09382112B2

公开(公告)日：2016-07-05

申请号：US14184496

申请日：2014-02-19

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yu Wen Hsu ,  Shih Ting Lin ,  Jen Yi Chen ,  Chao Ta Huang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5762

CPC classification number: B81C1/00301 ,  B81B3/0086 ,  B81B2201/0242 ,  B81B2207/07 ,  B81C2203/0792 ,  G01C19/5762

Abstract: A method for manufacturing a MEMS device includes the following operations. An SOI wafer including a device layer, an insulating layer and a handle layer is provided. The device layer is etched to form a recess and an annular protrusion surrounding the recess. A moving part and a spring of the MEMS device are formed on the recess by etching the device layer, the insulating layer and the handle layer. An anchor of the MEMS device is formed at the annular protrusion by etching the device layer, the insulating layer and the handle layer. The moving part and the anchor are connected to each other by the spring. The insulating layer is disposed between a first conductive portion and a second conductive portion of the moving part. The insulating layer is disposed between a first conductive portion and a second conductive portion of the anchor.

Abstract translation: MEMS器件的制造方法包括以下操作。 提供了包括器件层，绝缘层和手柄层的SOI晶片。 蚀刻器件层以形成凹部和围绕凹部的环形突起。 通过蚀刻器件层，绝缘层和手柄层，在凹部上形成MEMS器件的移动部件和弹簧。 通过蚀刻器件层，绝缘层和手柄层，在环形突起处形成MEMS器件的锚。 活动部分和锚通过弹簧相互连接。 绝缘层设置在移动部件的第一导电部分和第二导电部分之间。 绝缘层设置在锚的第一导电部分和第二导电部分之间。