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1.发明授权公开(公告)号：US12013383B2
公开(公告)日：2024-06-18
申请号：US17645627
申请日：2021-12-22
Applicant: Infineon Technologies AG
Inventor： Laurent Beaurenaut , Alexandra Marina Roth , Caterina Travan , Alexander Zoepfl
CPC classification number: G01N33/0036 , G01N27/308
Abstract: A gas sensing device comprises a sensing unit for sensing a target gas, the sensing unit comprising a carbon-based sensing layer which is sensitive to the target gas. The gas sensing device further comprises a controller unit for monitoring an exposure of the sensing layer to the target gas. The controller unit further initializes a recovery sequence for the sensing unit depending on an exposure of the sensing unit to the target gas. Further, the gas sensing device comprises a heating electrode for heating the sensing layer during the recovery sequence.
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公开(公告)号：US11635416B2
公开(公告)日：2023-04-25
申请号：US16838433
申请日：2020-04-02
Applicant: Infineon Technologies AG
Inventor： Cecilia Carbonelli , Alexander Jesipow , Alexandra Marina Roth , Alexander Zoepfl
Abstract: A gas sensing device includes chemo-resistive gas sensors; heating elements for heating each of the gas sensors; an information extraction block for receiving signal samples and for generating representations for the received signal samples; and a decision making block configured for receiving the representations, wherein the decision making block comprises a weighting block and a trained model based algorithm stage, wherein the weighting block receives feature samples of the representations and applies time-variant weighting functions to the feature samples of the respective representation in order to calculate a weighted representation including weighted feature samples.
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3.发明授权公开(公告)号：US11189539B2
公开(公告)日：2021-11-30
申请号：US16433278
申请日：2019-06-06
Applicant: Infineon Technologies AG
Inventor： Prashanth Makaram , John Cooper , Joerg Ortner , Stephan Pindl , Caterina Travan , Alexander Zoepfl
Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.
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4.发明申请公开(公告)号：US20210140920A1
公开(公告)日：2021-05-13
申请号：US17065899
申请日：2020-10-08
Applicant: Infineon Technologies AG
Inventor： Alexandra Marina Roth , Alexander Zoepfl
IPC: G01N27/414 , G01N27/62
Abstract: According to an embodiment, a composite material includes a graphene material, a carbon nanotube material, and a metal-containing material including at least one metal element.
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公开(公告)号：US20170356869A1
公开(公告)日：2017-12-14
申请号：US15620868
申请日：2017-06-13
Applicant: Infineon Technologies AG
Inventor： Matthias Koenig , Florian Bachl , Alexander Zoepfl , Guenther Ruhl
CPC classification number: G01N27/121 , G01N27/123 , G01N27/125 , G01N27/127 , G01N33/0027
Abstract: Various embodiments relate to a gas sensor, including: a carrier, an electrode structure; and a sensor layer in contact with the electrode structure, wherein the sensor layer includes or essentially consists of turbostratic graphite.
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Patent Agency Ranking
公开(公告)号：US20230288359A1
公开(公告)日：2023-09-14
申请号：US18176833
申请日：2023-03-01
Applicant: Infineon Technologies AG
Inventor： Simon Mittermaier , Werner Breuer , Cecilia Carbonelli , Alexandra Marina Roth , Jianyu Zhao , Alexander Zoepfl
CPC classification number: G01N27/12 , G01N33/0027
Abstract: A gas sensing device includes chemo-resistive gas sensors, wherein each of the gas sensors generates signals corresponding to concentrations of gases in a mixture of gases; a heating arrangement for heating gas sensors according to a periodic temperature profile; a preprocessing processor for receiving the signals from each of the gas sensors and for preprocessing the received signals to generate a preprocessed signal sample for each of the gas sensors for each period of the periodic temperature profile; a feature extraction processor configured for receiving the preprocessed signal samples and for extracting for each of the periods a set of feature values from the preprocessed signal samples received for the respective period; and a gas concentration processor for receiving sets of feature values.
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7.发明申请公开(公告)号：US20220236245A1
公开(公告)日：2022-07-28
申请号：US17645627
申请日：2021-12-22
Applicant: Infineon Technologies AG
Inventor： Laurent Beaurenaut , Alexandra Marina Roth , Caterina Travan , Alexander Zoepfl
Abstract: A gas sensing device comprises a sensing unit for sensing a target gas, the sensing unit comprising a carbon-based sensing layer which is sensitive to the target gas. The gas sensing device further comprises a controller unit for monitoring an exposure of the sensing layer to the target gas. The controller unit further initializes a recovery sequence for the sensing unit depending on an exposure of the sensing unit to the target gas. Further, the gas sensing device comprises a heating electrode for heating the sensing layer during the recovery sequence.
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公开(公告)号：US11378536B2
公开(公告)日：2022-07-05
申请号：US16433289
申请日：2019-06-06
Applicant: Infineon Technologies AG
Inventor： Derek Debie , Alexander Zoepfl
Abstract: A method for producing a nanofilm includes providing a microsieve having a first and a second opposite surface region, wherein micropores are formed between the first and second surface regions; applying a nanomaterial suspension on the first surface region of the microsieve, wherein the nanomaterial suspension comprises nanomaterial particles; and creating a pressure difference at a plurality of the micropores between the first and second surface region of the microsieve in order to move the nanomaterial suspension into the micropores and/or through the micropores, such that the nanomaterial particles adhere to the first surface region and to the wall regions of the micropores and form the nanofilm.
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9.发明授权公开(公告)号：US10024831B2
公开(公告)日：2018-07-17
申请号：US14751660
申请日：2015-06-26
Applicant: Infineon Technologies AG
Inventor： Guenther Ruhl , Thomas Hirsch , Alexander Zoepfl
Abstract: A gas sensor for measuring a concentration of carbon dioxide in a gas environment (GE) is provided. The gas sensor includes a graphene layer having a side facing towards the gas environment (GE), an electrode layer including a plurality of electrodes electrically connected to the graphene layer, and a chalcogenide layer covering at least a part of the side of the graphene layer facing towards the gas environment (GE).
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10.发明授权公开(公告)号：US11908763B2
公开(公告)日：2024-02-20
申请号：US17483312
申请日：2021-09-23
Applicant: Infineon Technologies AG
Inventor： Prashanth Makaram , John Cooper , Joerg Ortner , Stephan Pindl , Caterina Travan , Alexander Zoepfl
CPC classification number: H01L23/3171 , H01L21/02282 , H01L23/3178
Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.
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