公开(公告)号：US11594654B2

公开(公告)日：2023-02-28

申请号：US17461159

申请日：2021-08-30

Applicant: Infineon Technologies AG

Inventor： Andre Roeth ,  Henning Feick ,  Heiko Froehlich ,  Thoralf Kautzsch ,  Olga Khvostikova ,  Stefano Parascandola ,  Thomas Popp ,  Maik Stegemann ,  Mirko Vogt

IPC: H01L31/18 ,  H01L21/02 ,  H01L31/105 ,  H01L31/028 ,  H01L31/109

Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

公开(公告)号：US11422151B2

公开(公告)日：2022-08-23

申请号：US16860528

申请日：2020-04-28

Applicant: Infineon Technologies AG

Inventor： Thoralf Kautzsch ,  Steffen Bieselt ,  Heiko Froehlich ,  Andre Roeth ,  Maik Stegemann ,  Mirko Vogt ,  Bernhard Winkler

IPC: G01P15/125 ,  B81C1/00 ,  G01P15/08 ,  H01L21/02 ,  H01L21/768

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

公开(公告)号：US20220069156A1

公开(公告)日：2022-03-03

申请号：US17461159

申请日：2021-08-30

Applicant: Infineon Technologies AG

Inventor： Andre Roeth ,  Henning Feick ,  Heiko Froehlich ,  Thoralf Kautzsch ,  Olga Khvostikova ,  Stefano Parascandola ,  Thomas Popp ,  Maik Stegemann ,  Mirko Vogt

IPC: H01L31/18 ,  H01L31/105 ,  H01L31/028 ,  H01L21/02

Abstract: A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

公开(公告)号：US10684306B2

公开(公告)日：2020-06-16

申请号：US15200299

申请日：2016-07-01

Applicant: Infineon Technologies AG

Inventor： Steffen Bieselt ,  Heiko Froehlich ,  Thoralf Kautzsch ,  Andre Roeth ,  Maik Stegemann ,  Mirko Vogt ,  Bernhard Winkler

IPC: G01P15/125 ,  G01P15/08

Abstract: A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.