公开(公告)号：US20160124039A1

公开(公告)日：2016-05-05

申请号：US14923052

申请日：2015-10-26

Applicant: Infineon Technologies AG

Inventor： Eric Graetz ,  Hermann Bilban ,  Rudolf Pairleitner

IPC: G01R31/265 ,  H01L29/16 ,  H01L29/06 ,  H01L21/768 ,  H01L21/66 ,  H01L23/522 ,  G01R31/26 ,  H01L23/528

CPC classification number: G01R31/2656 ,  G01R31/2607 ,  H01L21/768 ,  H01L22/32 ,  H01L22/34 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/528 ,  H01L29/0688 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.

Abstract translation: 功率半导体器件包括半导体本体。 半导体本体包括有源半导体区域和围绕有源半导体区域的周边半导体区域。 有源半导体区域具有活性表面积，周边半导体区域具有周边表面积。 功率半导体器件还包括用于对周边半导体区域进行非接触测试的测试结构。 测试结构包括安装在周边表面区域上的导电路径。 测试结构被配置为从远程产生的电磁射频测试领域提取能量。

公开(公告)号：US11615963B2

公开(公告)日：2023-03-28

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US20180082848A1

公开(公告)日：2018-03-22

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US10741402B2

公开(公告)日：2020-08-11

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US09658279B2

公开(公告)日：2017-05-23

申请号：US14923052

申请日：2015-10-26

Applicant: Infineon Technologies AG

Inventor： Eric Graetz ,  Hermann Bilban ,  Rudolf Pairleitner

IPC: G01R31/265 ,  G01R31/26 ,  H01L21/768 ,  H01L21/66 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06 ,  H01L29/16

CPC classification number: G01R31/2656 ,  G01R31/2607 ,  H01L21/768 ,  H01L22/32 ,  H01L22/34 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/528 ,  H01L29/0688 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.

公开(公告)号：US20200343094A1

公开(公告)日：2020-10-29

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US20150262814A1

公开(公告)日：2015-09-17

申请号：US14207685

申请日：2014-03-13

Applicant: Infineon Technologies AG

Inventor： Mathias Plappert ,  Eric Graetz ,  Andreas Behrendt ,  Oliver Humbel ,  Carsten Schaeffer ,  Angelika Koprowski

IPC: H01L21/02 ,  H01L21/311 ,  H01L23/31 ,  H01L23/29 ,  H01L29/06 ,  H01L29/40

CPC classification number: H01L21/02126 ,  H01L21/02282 ,  H01L21/02318 ,  H01L23/296 ,  H01L23/3171 ,  H01L23/564 ,  H01L24/05 ,  H01L29/0619 ,  H01L29/404 ,  H01L29/66325 ,  H01L29/73 ,  H01L29/7393 ,  H01L2224/04042 ,  H01L2224/4847 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00

Abstract: A power semiconductor device in accordance with various embodiments may include: a semiconductor body; and a passivation layer disposed over at least a portion of the semiconductor body, wherein the passivation layer includes an organic dielectric material having a water uptake of less than or equal to 0.5 wt % in saturation.

Abstract translation: 根据各种实施例的功率半导体器件可以包括：半导体本体; 以及设置在所述半导体本体的至少一部分上的钝化层，其中所述钝化层包括具有小于或等于饱和度的0.5重量％的吸水率的有机介电材料。