公开(公告)号：US20190157435A1

公开(公告)日：2019-05-23

申请号：US16257300

申请日：2019-01-25

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L21/263 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/861 ,  H01L29/36 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×1013 cm−3 and 5×1014 cm−3.

公开(公告)号：US10211325B2

公开(公告)日：2019-02-19

申请号：US14165658

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L27/06 ,  H01L29/739 ,  H01L21/265 ,  H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861 ,  H01L21/263 ,  H01L29/36 ,  H01L29/10 ,  H01L29/08

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

公开(公告)号：US20150303260A1

公开(公告)日：2015-10-22

申请号：US14679514

申请日：2015-04-06

Applicant: Infineon Technologies AG

Inventor： Franz Josef Niedernostheide ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze ,  Holger Schulze ,  Frank Umbach ,  Christoph Weiss

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L21/283 ,  H01L29/66 ,  H01L23/31 ,  H01L21/56 ,  H01L29/739 ,  H01L29/40

CPC classification number: H01L29/0696 ,  H01L23/3157 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/6634 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7811 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Abstract translation: 半导体本体包括第一和第二相对表面，沿基本上垂直于第一表面的垂直方向延伸的边缘，有效区域，沿着基本上平行于有效区域和边缘之间的第一表面的水平方向布置的外围区域，以及 从有源区延伸到周边区域的pn结。 在外围区域中，半导体器件还包括邻近第一表面布置的第一导电区域，邻近第一表面设置并沿第一导电区域和边缘之间的水平方向布置的第二导电区域，以及包括 至少部分地覆盖所述第一导电区域的第一部分，至少部分地覆盖所述第二导电区域的第二部分。 第一部分具有不同于第二部分的层组成和/或与第二部分的厚度不同的厚度。

公开(公告)号：US20150206983A1

公开(公告)日：2015-07-23

申请号：US14162311

申请日：2014-01-23

Applicant: Infineon Technologies AG

Inventor： Hans Peter Felsl ,  Elmar Falck ,  Manfred Pfaffenlehner ,  Frank Hille ,  Andreas Haertl ,  Holger Schulze ,  Daniel Schloegl

IPC: H01L29/861 ,  H01L29/66

CPC classification number: H01L29/0603 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/8611

Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.

Abstract translation: 半导体二极管包括具有相反的第一和第二侧面的半导体本体。 第一和第二半导体区域沿着第二侧的横向连续地布置。 第一和第二半导体区域具有相反的第一和第二导电类型，并且在第二侧电耦合到电极。 半导体二极管还包括第二导电类型的第三半导体区域，该第二半导体区域埋在半导体本体中距离第二侧一定距离。 第二和第三半导体区域彼此分离。

公开(公告)号：US20150076597A1

公开(公告)日：2015-03-19

申请号：US14485852

申请日：2014-09-15

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Manfred Pfaffenlehner ,  Markus Schmitt

IPC: H01L21/322 ,  H01L29/78 ,  H01L29/872 ,  H01L29/32

CPC classification number: H01L21/3221 ,  H01L21/31 ,  H01L21/31155 ,  H01L23/291 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/0661 ,  H01L29/32 ,  H01L29/404 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.

Abstract translation: 对半导体元件及半导体元件的制造方法进行说明。 半导体部件包括：内部区域和边缘区域的半导体本体，以及至少配置在邻接边缘区域的半导体本体的表面上的钝化层。 钝化层包括半导体氧化物，其包括具有作为污染物的吸气中心的晶体缺陷的缺陷区域。

公开(公告)号：US20250107115A1

公开(公告)日：2025-03-27

申请号：US18826506

申请日：2024-09-06

Applicant: Infineon Technologies AG

Inventor： Manfred Pfaffenlehner ,  Arnab Biswas ,  Maria Cotorogea ,  Hans-Joachim Schulze ,  Philipp Seng

IPC: H01L29/861 ,  H01L27/06

Abstract: A power semiconductor diode includes: a semiconductor body with a drift region of a first conductivity type; a first load terminal at a first side of the semiconductor body coupled to an anode region of a second conductivity type in the semiconductor body and coupled to the drift region; a second load terminal at a second side of the semiconductor body coupled to both cathode regions of the first conductivity type and short regions of the second conductivity type of a doped region in the semiconductor body and coupled to the drift region; and a resistive element external of the semiconductor body. The diode conducts a load current between the load terminals, a first path of which crosses the anode region, drift region and cathode regions and a second path of which crosses the anode region, drift region and short regions. The resistive element exhibits a resistance having a positive-temperature-coefficient.

公开(公告)号：US10957764B2

公开(公告)日：2021-03-23

申请号：US14679514

申请日：2015-04-06

Applicant: Infineon Technologies AG

Inventor： Franz Josef Niedernostheide ,  Manfred Pfaffenlehner ,  Hans-Joachim Schulze ,  Holger Schulze ,  Frank Umbach ,  Christoph Weiss

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/40 ,  H01L29/861 ,  H01L23/31 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

公开(公告)号：US20190237575A1

公开(公告)日：2019-08-01

申请号：US16263244

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Hans-Joachim Schulze ,  Matteo Dainese ,  Elmar Falck ,  Franz-Josef Niedernostheide ,  Manfred Pfaffenlehner

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40

CPC classification number: H01L29/7811 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/402

Abstract: A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.

公开(公告)号：US09385181B2

公开(公告)日：2016-07-05

申请号：US14162311

申请日：2014-01-23

Applicant: Infineon Technologies AG

Inventor： Hans Peter Felsl ,  Elmar Falck ,  Manfred Pfaffenlehner ,  Frank Hille ,  Andreas Haertl ,  Holger Schulze ,  Daniel Schloegl

IPC: H01L29/861 ,  H01L29/06 ,  H01L29/66 ,  H01L29/36 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/0603 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/8611

Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.

Abstract translation: 半导体二极管包括具有相反的第一和第二侧面的半导体本体。 第一和第二半导体区域沿着第二侧的横向连续地布置。 第一和第二半导体区域具有相反的第一和第二导电类型，并且在第二侧电耦合到电极。 半导体二极管还包括第二导电类型的第三半导体区域，该第二半导体区域埋在半导体本体中距离第二侧一定距离。 第二和第三半导体区域彼此分离。

公开(公告)号：US20150214347A1

公开(公告)日：2015-07-30

申请号：US14165658

申请日：2014-01-28

Applicant: Infineon Technologies AG

Inventor： Elmar Falck ,  Andreas Haertl ,  Manfred Pfaffenlehner ,  Francisco Javier Santos Rodriguez ,  Daniel Schloegl ,  Hans-Joachim Schulze ,  Andre Stegner ,  Johannes Georg Laven

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L21/324 ,  H01L29/861 ,  H01L29/10

CPC classification number: H01L29/7395 ,  H01L21/263 ,  H01L21/265 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0623 ,  H01L29/0834 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/6609 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/861 ,  H01L29/8611

Abstract: A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×1013 cm−3 and 5×1014 cm−3. A device blocking voltage Vbr is defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Abstract translation: 半导体器件包括具有相反的第一和第二侧面的半导体本体。 半导体器件还包括在第二侧和pn结之间的半导体本体中的漂移区。 漂移区的净掺杂曲线沿着第一和第二边之间的漂移区的垂直延伸的至少50％是波形的，并且包括1×1013cm-3和5×1014cm-3之间的掺杂峰值。 器件阻断电压Vbr由漂移区和电耦合到半导体本体的第一侧的相反导电类型的半导体区之间的pn结的击穿电压限定。