MOLDED POWER SEMICONDUCTOR PACKAGE

    公开(公告)号:US20240404925A1

    公开(公告)日:2024-12-05

    申请号:US18205129

    申请日:2023-06-02

    Abstract: A molded power semiconductor package includes a mold compound having first and second opposing main surfaces and an edge between the first and second main surfaces. Power semiconductor dies are embedded in the mold compound. A metallic frame embedded in the mold compound is electrically connected to the power semiconductor dies. Pins protrude from the first main surface of the mold compound, each pin being secured to a respective contact area of the metallic frame that is exposed by an opening in the mold compound at the first main surface. One or more of the openings extends to the edge of the mold compound to form an open channel from each contact area exposed by the one or more of the openings to the edge of the mold compound. Additional package embodiments and methods of production are also described.

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