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    PCB Based Semiconductor Package Having Integrated Electrical Functionality
    1.
    发明申请
    PCB Based Semiconductor Package Having Integrated Electrical Functionality 有权
    具有集成电气功能的基于PCB的半导体封装

    公开(公告)号：US20170034913A1

    公开(公告)日：2017-02-02

    申请号：US14811325

    申请日：2015-07-28

    Applicant: Infineon Technologies AG

    Inventor： Qianli Mu ,  Cristian Gozzi ,  Michael Simcoe ,  Guillaume Bigny

    IPC: H05K1/18 ,  H05K1/11 ,  H05K1/02

    CPC classification number: H05K1/181 ,  H01L23/142 ,  H01L23/64 ,  H01L2224/49175 ,  H05K1/025 ,  H05K1/0298 ,  H05K1/111 ,  H05K1/115 ,  H05K1/144 ,  H05K1/182 ,  H05K3/421 ,  H05K3/429 ,  H05K2201/09236 ,  H05K2201/09327 ,  H05K2201/09336 ,  H05K2201/09481 ,  H05K2201/0959 ,  H05K2201/10166 ,  H05K2203/049

    Abstract: A semiconductor package includes a metal baseplate, a semiconductor die having a reference terminal attached to the baseplate and an RF terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the baseplate and a second side facing away from the baseplate. The multilayer circuit board includes a plurality of interleaved signal and ground layers. One of the signal layers is at the second side of the multilayer circuit board and electrically connected to the RF terminal of the semiconductor die. One of the ground layers is at the first side of the multilayer circuit board and attached to the metal baseplate. Power distribution structures are formed in the signal layer at the second side of the multilayer circuit board. RF matching structures are formed in a different one of the signal layers than the power distribution structures.

    Abstract translation: 半导体封装包括金属基板，具有附接到基板的参考端子的半导体管芯和远离基板的RF端子，以及多层电路板，其具有附接到基板的第一侧和远离基板的第二侧 底盘。 多层电路板包括多个交错信号和接地层。 信号层中的一个位于多层电路板的第二侧并电连接到半导体管芯的RF端子。 其中一个接地层位于多层电路板的第一侧并附着在金属底板上。 功率分配结构形成在多层电路板的第二侧的信号层中。 RF匹配结构形成在与功率分配结构不同的信号层中。

    RF power package having planar tuning lines
    4.
    发明授权
    RF power package having planar tuning lines 有权

    公开(公告)号：US10978411B2

    公开(公告)日：2021-04-13

    申请号：US15355498

    申请日：2016-11-18

    Applicant: Infineon Technologies AG

    Inventor： Michael Simcoe

    IPC: H01L23/66 ,  H01L23/00 ,  H03F3/60 ,  H01L23/48 ,  H01P5/02 ,  H01L21/48 ,  H01L23/498 ,  H01L25/07 ,  H01L25/00 ,  H01P3/08 ,  H03F1/02 ,  H03F3/19 ,  H03F3/21 ,  H01L21/66 ,  H01L23/538 ,  H03H7/38

    Abstract: An RF power package includes a substrate having a metallized part and an insulating part, an RF power transistor die embedded in or attached to the substrate, the RF power transistor die having a die input terminal, a die output terminal, an input impedance and an output impedance, a package input terminal formed in the metallized part or attached to the insulating part of the substrate, a package output terminal formed in the metallized part or attached to the insulating part of the substrate, and a first plurality of planar tuning lines formed in the metallized part of the substrate and electrically connecting the die output terminal to the package output terminal. The first plurality of planar tuning lines is shaped so as to transform the output impedance at the die output terminal to a higher target level at the package output terminal.

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